TY - JOUR
T1 - GMR effect of Cu/Co multilayer on Si(1 0 0)
AU - Ma, S. C.
AU - Lo, C. K.
AU - Yao, Y. D.
AU - Chiang, D. Y.
AU - Ying, T. F.
AU - Huang, D. R.
PY - 2000/2
Y1 - 2000/2
N2 - (Cu/Co)10 was deposited on SiO2/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO2/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R-H loop was higher than that in major R-H loop. This could be due to the increment of domain wall which enhances the electrons scattering.
AB - (Cu/Co)10 was deposited on SiO2/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO2/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R-H loop was higher than that in major R-H loop. This could be due to the increment of domain wall which enhances the electrons scattering.
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U2 - 10.1016/S0304-8853(99)00666-6
DO - 10.1016/S0304-8853(99)00666-6
M3 - Conference article
AN - SCOPUS:0034135468
SN - 0304-8853
VL - 209
SP - 131
EP - 134
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
IS - 1-3
T2 - Proceedings of the 1999 International Symposium on Advanced Magnetic Technologies (ISAMT'99)
Y2 - 24 May 1999 through 25 May 1999
ER -