GMR effect of Cu/Co multilayer on Si(1 0 0)

S. C. Ma, C. K. Lo, Y. D. Yao, D. Y. Chiang, T. F. Ying, D. R. Huang

研究成果: 雜誌貢獻會議論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

(Cu/Co)10 was deposited on SiO2/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO2/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R-H loop was higher than that in major R-H loop. This could be due to the increment of domain wall which enhances the electrons scattering.

原文英語
頁(從 - 到)131-134
頁數4
期刊Journal of Magnetism and Magnetic Materials
209
發行號1-3
DOIs
出版狀態已發佈 - 2000 二月
事件Proceedings of the 1999 International Symposium on Advanced Magnetic Technologies (ISAMT'99) - Taipei, Taiwan
持續時間: 1999 五月 241999 五月 25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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