(Cu/Co)10 was deposited on SiO2/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO2/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R-H loop was higher than that in major R-H loop. This could be due to the increment of domain wall which enhances the electrons scattering.
|頁（從 - 到）||131-134|
|期刊||Journal of Magnetism and Magnetic Materials|
|出版狀態||已發佈 - 2000 二月|
|事件||Proceedings of the 1999 International Symposium on Advanced Magnetic Technologies (ISAMT'99) - Taipei, Taiwan|
持續時間: 1999 五月 24 → 1999 五月 25
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