Giant Photoresponse in Quantized SrRuO3 Monolayer at Oxide Interfaces

Heng Jui Liu, Jing Ching Wang, Deok Yong Cho, Kang Ting Ho, Jheng Cyuan Lin, Bo Chao Huang, Yue Wen Fang, Yuan Min Zhu, Qian Zhan, Lin Xie, Xiao Qing Pan, Ya Ping Chiu, Chun Gang Duan, Jr Hau He, Ying Hao Chu*


研究成果: 雜誌貢獻期刊論文同行評審

23 引文 斯高帕斯(Scopus)


The photoelectric effect in semiconductors is the main mechanism for most modern optoelectronic devices, in which the adequate bandgap plays the key role for acquiring high photoresponse. Among numerous material categories applied in this field, the complex oxides exhibit great possibilities because they present a wide distribution of band gaps for absorbing light with any wavelength. Their physical properties and lattice structures are always strongly coupled and sensitive to light illumination. Moreover, the confinement of dimensionality of the complex oxides in the heterostructures can provide more diversities in designing and modulating the band structures. On the basis of this perspective, we have chosen itinerary ferromagnetic SrRuO3 as the model material, and fabricated it in one-unit-cell thickness in order to open a small band gap for effective utilization of visible light. By inserting this SrRuO3 monolayer at the interface of the well-developed two-dimensional electron gas system (LaAlO3/SrTiO3), the resistance of the monolayer can be further revealed. In addition, a giant enhancement (>300%) of photoresponse under illumination of visible light with power density of 500 mW/cm2 is also observed. Such can be ascribed to the further modulation of band structure of the SrRuO3 monolayer under the illumination, confirmed by cross-section scanning tunneling microscopy (XSTM). Therefore, this study demonstrates a simple route to design and explore the potential low dimensional oxide materials for future optoelectronic devices.

頁(從 - 到)1041-1049
期刊ACS Photonics
出版狀態已發佈 - 2018 3月 21

ASJC Scopus subject areas

  • 電子、光磁材料
  • 生物技術
  • 原子與分子物理與光學
  • 電氣與電子工程


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