Giant magnetocurrent in silicon-base magnetic tunneling transistor

Y. W. Huang; C. K. Lo; Y. D. Yao; L. C. Hsieh; J. J. Ju; D. R. Huang; J. H. Huang

doi:10.1016/j.jmmm.2004.04.065

Giant magnetocurrent in silicon-base magnetic tunneling transistor

Y. W. Huang, C. K. Lo^*, Y. D. Yao, L. C. Hsieh, J. J. Ju, D. R. Huang, J. H. Huang

^*此作品的通信作者

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

6 引文斯高帕斯（Scopus）

摘要

A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.

原文	英語
頁（從 - 到）	279-282
頁數	4
期刊	Journal of Magnetism and Magnetic Materials
卷	282
發行號	1-3
DOIs	https://doi.org/10.1016/j.jmmm.2004.04.065
出版狀態	已發佈 - 2004 11月
對外發佈	是
事件	International Symposium on Advanced Magnetic Technologies - Taipei, 臺灣持續時間: 2003 11月 13 → 2003 11月 16

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學

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10.1016/j.jmmm.2004.04.065

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title = "Giant magnetocurrent in silicon-base magnetic tunneling transistor",

abstract = "A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.",

keywords = "Magnetic tunneling junction, Magnetocurrent, Spin transistor",

author = "Huang, {Y. W.} and Lo, {C. K.} and Yao, {Y. D.} and Hsieh, {L. C.} and Ju, {J. J.} and Huang, {D. R.} and Huang, {J. H.}",

note = "Funding Information: We are grateful for the financial support from MOEA and NSC under grant Nos. of A331XS3710 and NSC92-2120-M-001-008. Besides, we thank Mr. W.H. Chou, Dr. J.H. Tsai and Dr. P.P. Tsai of the Nano-technology Research Center of ITRI for their technical help.; International Symposium on Advanced Magnetic Technologies ; Conference date: 13-11-2003 Through 16-11-2003",

year = "2004",

month = nov,

doi = "10.1016/j.jmmm.2004.04.065",

language = "English",

volume = "282",

pages = "279--282",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

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TY - JOUR

T1 - Giant magnetocurrent in silicon-base magnetic tunneling transistor

AU - Huang, Y. W.

AU - Lo, C. K.

AU - Yao, Y. D.

AU - Hsieh, L. C.

AU - Ju, J. J.

AU - Huang, D. R.

AU - Huang, J. H.

N1 - Funding Information: We are grateful for the financial support from MOEA and NSC under grant Nos. of A331XS3710 and NSC92-2120-M-001-008. Besides, we thank Mr. W.H. Chou, Dr. J.H. Tsai and Dr. P.P. Tsai of the Nano-technology Research Center of ITRI for their technical help.

PY - 2004/11

Y1 - 2004/11

N2 - A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.

AB - A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.

KW - Magnetic tunneling junction

KW - Magnetocurrent

KW - Spin transistor

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UR - http://www.scopus.com/inward/citedby.url?scp=5744239099&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2004.04.065

DO - 10.1016/j.jmmm.2004.04.065

M3 - Conference article

AN - SCOPUS:5744239099

SN - 0304-8853

VL - 282

SP - 279

EP - 282

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1-3

T2 - International Symposium on Advanced Magnetic Technologies

Y2 - 13 November 2003 through 16 November 2003

ER -

Giant magnetocurrent in silicon-base magnetic tunneling transistor

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ASJC Scopus subject areas

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