Giant magnetocurrent in silicon-base magnetic tunneling transistor

Y. W. Huang, Chi-Kuen Lo, Y. D. Yao, L. C. Hsieh, J. J. Ju, D. R. Huang, J. H. Huang

研究成果: 雜誌貢獻會議論文同行評審

6 引文 斯高帕斯(Scopus)


A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.

頁(從 - 到)279-282
期刊Journal of Magnetism and Magnetic Materials
出版狀態已發佈 - 2004 十一月
事件International Symposium on Advanced Magnetic Technologies - Taipei, 臺灣
持續時間: 2003 十一月 132003 十一月 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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