A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.
|頁（從 - 到）||279-282|
|期刊||Journal of Magnetism and Magnetic Materials|
|出版狀態||已發佈 - 2004 十一月|
|事件||International Symposium on Advanced Magnetic Technologies - Taipei, 臺灣|
持續時間: 2003 十一月 13 → 2003 十一月 16
ASJC Scopus subject areas