This paper reported the IGZO and IZO thin-film transistor (TFT) with titanium-oxide semiconductor as channel capping layer. After the TiO Gettering process, the oxygen vacancies in IGZO channel were successfully modified to maximize the carrier concentration and device mobility. The superior transfer characteristics included a low sub-threshold swing of 79 mV/decade, a very high mobility of 68 cm2 V·s, and good on/off-current ratio of 5.61×106. However, the IZO channel with nano-crystallized grains and without Ga atom doping showed unfavorable transistor characteristics. In addition to apparently degraded transfer properties, the spontaneously oxidized TiOx capping layer also lead to an increase of channel parasitic resistance that limits the output driving current. Therefore, we believe that the existence of Ga-O bonds among IGZO channel would be helpful to stabilize oxygen diffusion behavior and electric structure during Gettering process.
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