GeO2/PZT resistive random access memory devices with Ni electrode

Kun I. Chou, Chun Hu Cheng, Albert Chin

研究成果: 書貢獻/報告類型會議貢獻

摘要

We report a resistive random-access memory (RRAM) using stacked GeO 2 and PZT. Under unipolar mode operation, the Ni/GeO 2/PZT/TaN RRAM shows a good DC cycling of 2×103 cycles, 85 °C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO2.

原文英語
主出版物標題2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
出版狀態已發佈 - 2013 十二月 23
事件2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, 香港
持續時間: 2013 六月 32013 六月 5

出版系列

名字2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

其他

其他2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
國家香港
城市Hong Kong
期間13/6/313/6/5

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • 引用此

    Chou, K. I., Cheng, C. H., & Chin, A. (2013). GeO2/PZT resistive random access memory devices with Ni electrode. 於 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 [6628194] (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628194