GeO2/PZT resistive random access memory devices with Ni electrode

Kun I. Chou, Chun Hu Cheng, Albert Chin

研究成果: 書貢獻/報告類型會議論文篇章

摘要

We report a resistive random-access memory (RRAM) using stacked GeO 2 and PZT. Under unipolar mode operation, the Ni/GeO 2/PZT/TaN RRAM shows a good DC cycling of 2×103 cycles, 85 °C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO2.

原文英語
主出版物標題2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
出版狀態已發佈 - 2013 十二月 23
事件2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, 香港
持續時間: 2013 六月 32013 六月 5

出版系列

名字2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

其他

其他2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
國家/地區香港
城市Hong Kong
期間2013/06/032013/06/05

ASJC Scopus subject areas

  • 硬體和架構
  • 電氣與電子工程

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