Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs

E. R. Hsieh, Y. C. Fan, C. H. Liu, Steve S. Chung, R. M. Huang, C. T. Tsai, T. R. Yew

研究成果: 書貢獻/報告類型會議貢獻

摘要

A new theory has been developed for geometric variation of trigate FinFETs. This geometric variation includes both line roughness induced variation and oxide-thickness variation, which can be measured from gate capacitance and Ig current variations, respectively. Experimental results show that trigate devices are subject to serious line variations as the fin height scales up and the fin-width scales down, leading to large Ion current variation, i.e., as we increase the fin aspect-ratio, line variation becomes worse which shows an increase of the active power consumption. On the other hand, oxide-thickness variation reveals significant impacts on the off-state leakage, i.e., a rough gate oxide yields to larger static power. These valuable results provide us important guideline for the design and manufacturing of high quality 3D gate FinFETs.

原文英語
主出版物標題2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面130-131
頁數2
ISBN(電子)9781509046591
DOIs
出版狀態已發佈 - 2017 六月 13
事件2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, 日本
持續時間: 2017 二月 282017 三月 2

出版系列

名字2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

其他

其他2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
國家日本
城市Toyama
期間17/2/2817/3/2

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • 引用此

    Hsieh, E. R., Fan, Y. C., Liu, C. H., Chung, S. S., Huang, R. M., Tsai, C. T., & Yew, T. R. (2017). Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs. 於 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (頁 130-131). [7947549] (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947549