Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs

W. C. Hua*, M. H. Lee, P. S. Chen, S. Maikap, C. W. Liu, K. M. Chen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

58 引文 斯高帕斯(Scopus)

摘要

The flicker noise characteristics of strained-Si nMOSFETs are significantly dependent on the gate oxide formation. At high temperature (900 °C) thermal oxidation, the Si interstitials at the Si/oxide interface were injected into the underneath Si-SiGe heterojunction, and enhanced the Ge outdiffusion into the Si/oxide interface. The Ge atoms at Si/oxide interface act as trap centers, and the strained-Si nMOSFET with thermal gate oxide yields a much larger flicker noise than the control Si device. The Ge outdiffusion is suppressed for the device with the low temperature (700 °C) tetraethylorthosilicate gate oxide. The capacitance-voltage measurements of the strained-Si devices with thermal oxide also show that the Si/oxide interface trap density increases and the Si-SiGe heterojunction is smeared out due to the Ge outdiffusion.

原文英語
頁(從 - 到)693-695
頁數3
期刊IEEE Electron Device Letters
25
發行號10
DOIs
出版狀態已發佈 - 2004 10月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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