Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

S. Y. Liao, C. C. Lu, T. Chang, C. F. Huang, Chun-Hu Cheng*, L. B. Chang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

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Engineering & Materials Science

Chemical Compounds

Medicine & Life Sciences

Physics & Astronomy