GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror

Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang

研究成果: 雜誌貢獻期刊論文同行評審

13 引文 斯高帕斯(Scopus)

摘要

A GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet reflector with a 57° against {0001} C-axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.

原文英語
頁(從 - 到)724-726
頁數3
期刊IEEE Photonics Technology Letters
18
發行號5
DOIs
出版狀態已發佈 - 2006 3月 1
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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