GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror

Y. J. Lee; J. M. Hwang; T. C. Hsu; M. H. Hsieh; M. J. Jou; B. J. Lee; T. C. Lu; H. C. Kuo; S. C. Wang

doi:10.1109/LPT.2006.871136

GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror

Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

14 引文斯高帕斯（Scopus）

摘要

A GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet reflector with a 57° against {0001} C-axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.

原文	英語
頁（從 - 到）	724-726
頁數	3
期刊	IEEE Photonics Technology Letters
卷	18
發行號	5
DOIs	https://doi.org/10.1109/LPT.2006.871136
出版狀態	已發佈 - 2006 3月 1
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
原子與分子物理與光學
電氣與電子工程

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10.1109/LPT.2006.871136

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title = "GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror",

abstract = "A GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet reflector with a 57° against {0001} C-axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.",

keywords = "GaN, Light-emitting diode (LED), Sapphire chemical wet etching",

author = "Lee, {Y. J.} and Hwang, {J. M.} and Hsu, {T. C.} and Hsieh, {M. H.} and Jou, {M. J.} and Lee, {B. J.} and Lu, {T. C.} and Kuo, {H. C.} and Wang, {S. C.}",

year = "2006",

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doi = "10.1109/LPT.2006.871136",

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journal = "IEEE Photonics Technology Letters",

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TY - JOUR

T1 - GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror

AU - Lee, Y. J.

AU - Hwang, J. M.

AU - Hsu, T. C.

AU - Hsieh, M. H.

AU - Jou, M. J.

AU - Lee, B. J.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - A GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet reflector with a 57° against {0001} C-axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.

AB - A GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet reflector with a 57° against {0001} C-axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.

KW - GaN

KW - Light-emitting diode (LED)

KW - Sapphire chemical wet etching

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JF - IEEE Photonics Technology Letters

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GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror

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