GaAs/In 0.5Ga 0.5P laser power converter with undercut mesa for simultaneous high-speed data detection and DC electrical power generation

Jin Wei Shi*, Cheng Yo Tsai, Chan Shan Yang, Feng Ming Kuo, Yue Ming Hsin, J. E. Bowers, Ci Ling Pan

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

We demonstrate novel GaAs/In 0.5Ga 0.5P high-speed laser power converters (LPCs), which not only can detect the envelope of incoming high-speed optical data but also can efficiently convert its optical dc component to dc electrical power. By utilizing the graded p-type GaAs and n-type In 0.5Ga 0.5P layers as photoabsorption (P) and collector (C) layers, respectively, the problem of slow-motion holes under 830-nm-optical-wavelength excitation and the conduction-band-offset-induced electron blocking effect between the P/C layers, which seriously limit the high-speed performance of LPC, can both be eliminated. Furthermore, by using the undercut mesa structure of the In 0.5Ga 0.5P C layer to further reduce the large junction capacitance under forward operation, we can achieve invariable high-speed performance (∼9 GHz) from zero to near turn-on voltage (+0.8 V), which corresponds to the operation point of our LPC with the maximum power conversion efficiency (∼ 15%).

原文英語
文章編號6151018
頁(從 - 到)561-563
頁數3
期刊IEEE Electron Device Letters
33
發行號4
DOIs
出版狀態已發佈 - 2012 4月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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