Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng, Shu Hung Yu, Ching Yuan Su, Chung Yen Su

研究成果: 雜誌貢獻文章同行評審

26 引文 斯高帕斯(Scopus)

摘要

This study demonstrates the feasibility of producing an InGaZnO thin-film transistor (TFT) using a high-κ germanium oxide (GeO2)/titanium oxide (TiO2)/GeO2 gate stack on a flexible polycarbonate substrate. The flexible TFT exhibited a small sub-threshold swing of 0.132 V/decade, an acceptable field effect mobility of 8 cm2/(V s), and a robust Ion/Ioff ratio of 2.4 × 107. The improved device performance can be attributed to the combined effect of high-κ TiO2 and the large band gap of GeO2 that exhibits a tendency to remain in a Ge4+ oxidation state at room temperature.

原文英語
頁(從 - 到)194-197
頁數4
期刊Solid-State Electronics
89
DOIs
出版狀態已發佈 - 2013 十月 4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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