Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng*, Shu Hung Yu, Ching Yuan Su, Chung Yen Su

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

28 引文 斯高帕斯(Scopus)

摘要

This study demonstrates the feasibility of producing an InGaZnO thin-film transistor (TFT) using a high-κ germanium oxide (GeO2)/titanium oxide (TiO2)/GeO2 gate stack on a flexible polycarbonate substrate. The flexible TFT exhibited a small sub-threshold swing of 0.132 V/decade, an acceptable field effect mobility of 8 cm2/(V s), and a robust Ion/Ioff ratio of 2.4 × 107. The improved device performance can be attributed to the combined effect of high-κ TiO2 and the large band gap of GeO2 that exhibits a tendency to remain in a Ge4+ oxidation state at room temperature.

原文英語
頁(從 - 到)194-197
頁數4
期刊Solid-State Electronics
89
DOIs
出版狀態已發佈 - 2013

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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