Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy

C. L. Chao, C. H. Chiu, Y. J. Lee, H. C. Kuo, Po Chun Liu, Jeng Dar Tsay, S. J. Cheng

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    49 引文 斯高帕斯(Scopus)

    摘要

    This work proposes a method for fabricating 2 in. freestanding GaN substrates of high crystallographic quality and low residual strain. Arrays of GaN nanorods with sidewalls coated with silicon dioxide (SiO2) were randomly arranged on the sapphire substrate as a growth template for subsequent hydride vapor-phase epitaxy (HVPE). The passivation of the sidewalls coated with SiO2 prevents the coalescence of GaN grains in spaces between the rods, causing them to grow preferentially on the top of individual rods. The proposed method significantly improves GaN crystal quality and results in self-separation from the underlying host sapphire substrate due to the relaxation of thermal strains in the HVPE cooling-down process.

    原文英語
    文章編號051905
    期刊Applied Physics Letters
    95
    發行號5
    DOIs
    出版狀態已發佈 - 2009

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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