@article{26d518016f644e329930d20a6b91b2a9,
title = "Forward gated-diode measurement of filled traps in high-field stressed thin oxides",
abstract = "The forward gated-diode monitoring technique can find its potential applications in assessing the filled traps in MOSFET thin oxides, which are subjected to high-field stressing and then followed by hot-electrons filling scheme. Our measurement of the gate voltage shift associated with the forward current peak produces a power law relation between the filled trap density and the electron stress fluence, indeed in close agreement with that obtained by MOSFET threshold voltage shift.",
author = "Chen, {Ming Jer} and Kang, {Ting Kuo} and Huang, {Huan Tsung} and Liu, {Chuan Hsi} and Chang, {Yih J.} and Fu, {Kuan Yu}",
note = "Funding Information: Manuscript received December 2, 1999. This work was supported by the National Science Council under Contract 89-2215-009-049. The review of this brief was arranged by Editor C.-Y. Lu. M.-J. Chen, T.-K. Kang, and H.-T. Huang are with the Department of Electronics Engineering, National Chiao-Tung University, Hsinchu, Taiwan, R.O.C. (e-mail:
[email protected]). C.-H. Liu, Y. J. Chang, and K.-Y. Fu are with United Microelectronics Corporation, Hsinchu, Taiwan, R.O.C. Publisher Item Identifier S 0018-9383(00)06050-0.",
year = "2000",
month = aug,
doi = "10.1109/16.853050",
language = "English",
volume = "47",
pages = "1682--1683",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",
}