Forward gated-diode measurement of filled traps in high-field stressed thin oxides

Ming Jer Chen, Ting Kuo Kang, Huan Tsung Huang, Chuan Hsi Liu, Yih J. Chang, Kuan Yu Fu

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

摘要

The forward gated-diode monitoring technique can find its potential applications in assessing the filled traps in MOSFET thin oxides, which are subjected to high-field stressing and then followed by hot-electrons filling scheme. Our measurement of the gate voltage shift associated with the forward current peak produces a power law relation between the filled trap density and the electron stress fluence, indeed in close agreement with that obtained by MOSFET threshold voltage shift.

原文英語
頁(從 - 到)1682-1683
頁數2
期刊IEEE Transactions on Electron Devices
47
發行號8
DOIs
出版狀態已發佈 - 2000 八月

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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