Formation and annealing effect for close-packed Ge/Cu(111) layers

J. S. Tsay; L. W. Chang; A. B. Yang

doi:10.1116/1.1615972

Formation and annealing effect for close-packed Ge/Cu(111) layers

J. S. Tsay^*
, L. W. Chang
, A. B. Yang

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

Growth and annealing effects in Ge/Cu(111) ultrathin film was deposited at ambient temperature were studied using AES and LEED techniques. LEED observation shows a 1X1 structure of 5 ML Ge/Cu(111) film. The kinetic energy of Cu L₃M₄₅M₄₅ Auger electrons shifts to a lower value upon deposition of Ge overlayers.

原文	英語
頁（從 - 到）	1892-1894
頁數	3
期刊	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
卷	21
發行號	6
DOIs	https://doi.org/10.1116/1.1615972
出版狀態	已發佈 - 2003 11月
對外發佈	是

ASJC Scopus subject areas

凝聚態物理學
表面和介面
表面、塗料和薄膜

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10.1116/1.1615972

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title = "Formation and annealing effect for close-packed Ge/Cu(111) layers",

abstract = "Growth and annealing effects in Ge/Cu(111) ultrathin film was deposited at ambient temperature were studied using AES and LEED techniques. LEED observation shows a 1X1 structure of 5 ML Ge/Cu(111) film. The kinetic energy of Cu L3M45M45 Auger electrons shifts to a lower value upon deposition of Ge overlayers.",

author = "Tsay, \{J. S.\} and Chang, \{L. W.\} and Yang, \{A. B.\}",

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issn = "0734-2101",

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T1 - Formation and annealing effect for close-packed Ge/Cu(111) layers

AU - Tsay, J. S.

AU - Chang, L. W.

AU - Yang, A. B.

PY - 2003/11

Y1 - 2003/11

N2 - Growth and annealing effects in Ge/Cu(111) ultrathin film was deposited at ambient temperature were studied using AES and LEED techniques. LEED observation shows a 1X1 structure of 5 ML Ge/Cu(111) film. The kinetic energy of Cu L3M45M45 Auger electrons shifts to a lower value upon deposition of Ge overlayers.

AB - Growth and annealing effects in Ge/Cu(111) ultrathin film was deposited at ambient temperature were studied using AES and LEED techniques. LEED observation shows a 1X1 structure of 5 ML Ge/Cu(111) film. The kinetic energy of Cu L3M45M45 Auger electrons shifts to a lower value upon deposition of Ge overlayers.

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UR - https://www.scopus.com/pages/publications/0842344414#tab=citedBy

U2 - 10.1116/1.1615972

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M3 - Article

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SN - 0734-2101

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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ER -

Formation and annealing effect for close-packed Ge/Cu(111) layers

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