Flip-chip-assembled W-band CMOS chip modules on ceramic integrated passive device with transition compensation for millimeter-wave system-in-package integration

Hsin Chia Lu*, Che Chung Kuo, Po An Lin, Chen Fang Tai, Yi Long Chang, Yu Sian Jiang, Jeng Han Tsai, Yue Ming Hsin, Huei Wang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

34 引文 斯高帕斯(Scopus)

摘要

In this paper, W-band flip-chip-assembled CMOS chip modules with transition compensation are presented, a three-stage amplifier, a balanced amplifier, and a down-converted Gilbert-cell subharmonic mixer are included in the chip set. The flip-chip process on ceramic integrated passive devices (CIPD) with a bump size of 30 μm × 30 μm × 27 μm is developed for millimeter-wave applications. Without the flip-chip transition compensation, the frequency of the return loss of each chip is shifted, which deviates from the bare die measurement results. By applying the compensation network in the transition, the dips of the return loss are tuned back closer to the bare die measurement results. Moreover, a W -band amplifier flip-chip-assembled with a CPW-fed Yagi-Uda antenna on a CIPD and a W -band flip-chip-assembled receiver are presented for SiP integration. The effect of dicing edge variation is also included in the flip-chip model to achieve reasonable agreement between simulated and measured scattering parameters. To the best of our knowledge, this is the first demonstration of a CMOS chip set with flip-chip interconnects in the W-band for a system-in-package.

原文英語
文章編號06129527
頁(從 - 到)766-777
頁數12
期刊IEEE Transactions on Microwave Theory and Techniques
60
發行號3 PART 2
DOIs
出版狀態已發佈 - 2012 三月

ASJC Scopus subject areas

  • 輻射
  • 凝聚態物理學
  • 電氣與電子工程

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