摘要
In this Letter, we report a low operation voltage and high mobility flexible InGaZnO thin-film transistor (TFT) using room-temperature processed Y2O3/TiO2/Y2O3 gate dielectric. The flexible IGZO TFT showed a low threshold voltage of 0.75 V, a small sub-threshold swing of 137 mV/decade, a good field effect mobility of 32.7 cm2/V s, and a large Ion/Ioff ratio of 1.7 × 106. The low operation voltage, small sub-threshold swing and high mobility could be ascribed to the combination of high-κ TiO2 and large band gap Y2O3, which provide the potential to meet the requirements of low-temperature and low-power portable electronics.
原文 | 英語 |
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頁(從 - 到) | 285-288 |
頁數 | 4 |
期刊 | Physica Status Solidi - Rapid Research Letters |
卷 | 7 |
發行號 | 4 |
DOIs | |
出版狀態 | 已發佈 - 2013 4月 |
ASJC Scopus subject areas
- 一般材料科學
- 凝聚態物理學