Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics

Hsiao Hsuan Hsu; Chun Yen Chang; Chun Hu Cheng; Shu Hung Yu; Ching Yuan Su

doi:10.1109/EDSSC.2013.6628218

Flexible InGaZnO TFTs with stacked GeO₂/TiO₂ gate dielectrics

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng, Shu Hung Yu, Ching Yuan Su

機電工程學系

研究成果: 書貢獻/報告類型 › 會議貢獻

摘要

We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO₂/TiO₂ on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm ²/Vs, and a good I_on/I_off ratio of 3.7×10⁵. The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO₂ and higher-K TiO₂.

原文	英語
主出版物標題	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs	https://doi.org/10.1109/EDSSC.2013.6628218
出版狀態	已發佈 - 2013 十二月 23
事件	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, 香港持續時間: 2013 六月 3 → 2013 六月 5

其他

其他	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
國家	香港
城市	Hong Kong
期間	13/6/3 → 13/6/5

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

存取文件

10.1109/EDSSC.2013.6628218

指紋深入研究「Flexible InGaZnO TFTs with stacked GeO<sub>2</sub>/TiO<sub>2</sub> gate dielectrics」主題。共同形成了獨特的指紋。

引用此

Hsu, H. H., Chang, C. Y., Cheng, C. H., Yu, S. H., & Su, C. Y. (2013). Flexible InGaZnO TFTs with stacked GeO₂/TiO₂ gate dielectrics. 於 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 [6628218] https://doi.org/10.1109/EDSSC.2013.6628218

Hsu, HH, Chang, CY, Cheng, CH, Yu, SH & Su, CY 2013, Flexible InGaZnO TFTs with stacked GeO₂/TiO₂ gate dielectrics. 於 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628218, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, 香港, 13/6/3. https://doi.org/10.1109/EDSSC.2013.6628218

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title = "Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics",

abstract = "We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm 2/Vs, and a good Ion/Ioff ratio of 3.7×105. The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-K TiO2.",

keywords = "flexible, GeO, thin film transistor (TFT), TiO",

author = "Hsu, {Hsiao Hsuan} and Chang, {Chun Yen} and Cheng, {Chun Hu} and Yu, {Shu Hung} and Su, {Ching Yuan}",

year = "2013",

month = dec,

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doi = "10.1109/EDSSC.2013.6628218",

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AU - Hsu, Hsiao Hsuan

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AU - Su, Ching Yuan

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N2 - We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm 2/Vs, and a good Ion/Ioff ratio of 3.7×105. The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-K TiO2.

AB - We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm 2/Vs, and a good Ion/Ioff ratio of 3.7×105. The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-K TiO2.

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