摘要
We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm 2/Vs, and a good Ion/Ioff ratio of 3.7×105. The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-K TiO2.
原文 | 英語 |
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主出版物標題 | 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 |
DOIs | |
出版狀態 | 已發佈 - 2013 十二月 23 |
事件 | 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, 香港 持續時間: 2013 六月 3 → 2013 六月 5 |
其他
其他 | 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 |
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國家 | 香港 |
城市 | Hong Kong |
期間 | 2013/06/03 → 2013/06/05 |
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering