Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng, Shu Hung Yu, Ching Yuan Su

研究成果: 書貢獻/報告類型 › 會議貢獻

摘要

We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm 2/Vs, and a good Ion/Ioff ratio of 3.7×105. The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-K TiO2.

原文英語
主出版物標題2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
出版狀態已發佈 - 2013 十二月 23
事件2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, 香港
持續時間: 2013 六月 3 → 2013 六月 5

其他

其他2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
國家香港
城市Hong Kong
期間13/6/3 → 13/6/5

指紋

Gate dielectrics
Amorphous films
Substrates
Thin film transistors
Polycarbonates
Threshold voltage
Energy gap
Plastics
Ions
Electric potential

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

引用此文

Hsu, H. H., Chang, C. Y., Cheng, C. H., Yu, S. H., & Su, C. Y. (2013). Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics. 於 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 [6628218] https://doi.org/10.1109/EDSSC.2013.6628218

Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics. / Hsu, Hsiao Hsuan; Chang, Chun Yen; Cheng, Chun Hu; Yu, Shu Hung; Su, Ching Yuan.

2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628218.

研究成果: 書貢獻/報告類型 › 會議貢獻

Hsu, HH, Chang, CY, Cheng, CH, Yu, SH & Su, CY 2013, Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics. 於 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628218, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, 香港, 13/6/3. https://doi.org/10.1109/EDSSC.2013.6628218
Hsu HH, Chang CY, Cheng CH, Yu SH, Su CY. Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics. 於 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628218 https://doi.org/10.1109/EDSSC.2013.6628218
Hsu, Hsiao Hsuan ; Chang, Chun Yen ; Cheng, Chun Hu ; Yu, Shu Hung ; Su, Ching Yuan. / Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics. 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013.
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