For the first time, the ion-vacancy-based bipolar RRAM has been demonstrated on HKMG stack of FEOL logic 14nm FinFET. A unit cell with two identical FinFETs, one serves as a control transistor and the other one is the storage with resistance switching. It is performed by the edge tunneling and with bipolar switching. More importantly, the sneak path issue in an AND-type array based on this FinFET unit cell has been thoroughly investigated. To solve sneak path issue, a new active-fin-isolation (AFI) of FinFET in an AND-type array was proposed. This new AFI effectively increases the S/N margin of 103 and significantly reduces the standby power of 30% and active power of 99%, compared to original AND-type array. This work provides a promising candidate for the embedded FLASH memory on FinFET platform featuring fully-CMOS compatible integration and low cost solution in the more-than-Moore era.