Field emission and Raman spectroscopy studies of atomic hydrogen etching on boron and nitrogen doped DLC films

Y. H. Wu, C. M. Hsu, C. T. Chia, I. N. Lin, C. L. Cheng*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

15 引文 斯高帕斯(Scopus)

摘要

This research studies diamond-like carbon (DLC) films doped with both boron and nitrogen prepared by microwave plasma enhanced chemical vapor deposition (MPECVD). The as-prepared samples with various doping of boron and nitrogen species were characterized using a Raman spectroscopic technique, and the electron field emission of the films was measured. The electron field emission properties of the as-deposited samples at fixed nitrogen doping vary with boron content significantly. The results infer that only when proper dopants are incorporated, the electron conduction in the DLC films is improved and the electron emission is enhanced. From the analysis of Raman spectra, it is found that the field emission depends on the relative intensities of D- and G-bands as well as the D*-band (~ 1150 cm -1) and G*-band (~ 1500 cm -1) that co-exist in the films. Post-production modification of the as-deposited samples via thermal annealing and annealing with atomic hydrogen etching were also conducted in an effort to understand the electron field emission mechanism.

原文英語
頁(從 - 到)804-808
頁數5
期刊Diamond and Related Materials
11
發行號3-6
DOIs
出版狀態已發佈 - 2002 三月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 化學 (全部)
  • 機械工業
  • 材料化學
  • 電氣與電子工程

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