Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors

Min Hung Lee; Y. T. Wei; C. Liu; J. J. Huang; Ming Tang; Yu Lun Chueh; K. Y. Chu; Miin Jang Chen; Heng Yuan Lee; Yu Sheng Chen; Li Heng Lee; Ming Jinn Tsai

doi:10.1109/JEDS.2015.2435492

Ferroelectricity of HfZrO₂ in energy landscape with surface potential gain for low-power steep-slope transistors

Min Hung Lee^*, Y. T. Wei, C. Liu, J. J. Huang, Ming Tang, Yu Lun Chueh, K. Y. Chu, Miin Jang Chen, Heng Yuan Lee, Yu Sheng Chen, Li Heng Lee, Ming Jinn Tsai

^*此作品的通信作者

光電工程學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

62 引文斯高帕斯（Scopus）

摘要

The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO₂ (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.

原文	英語
文章編號	7110513
頁（從 - 到）	377-381
頁數	5
期刊	IEEE Journal of the Electron Devices Society
卷	3
發行號	4
DOIs	https://doi.org/10.1109/JEDS.2015.2435492
出版狀態	已發佈 - 2015 7月 1

ASJC Scopus subject areas

生物技術
電子、光磁材料
電氣與電子工程

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10.1109/JEDS.2015.2435492

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Lee, M. H., Wei, Y. T., Liu, C., Huang, J. J., Tang, M., Chueh, Y. L., Chu, K. Y., Chen, M. J., Lee, H. Y., Chen, Y. S., Lee, L. H., & Tsai, M. J. (2015). Ferroelectricity of HfZrO₂ in energy landscape with surface potential gain for low-power steep-slope transistors. IEEE Journal of the Electron Devices Society, 3(4), 377-381. 文章 7110513. https://doi.org/10.1109/JEDS.2015.2435492

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title = "Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors",

abstract = "The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.",

keywords = "ferroelectric, negative capacitance, subthreshold swing",

author = "Lee, {Min Hung} and Wei, {Y. T.} and C. Liu and Huang, {J. J.} and Ming Tang and Chueh, {Yu Lun} and Chu, {K. Y.} and Chen, {Miin Jang} and Lee, {Heng Yuan} and Chen, {Yu Sheng} and Lee, {Li Heng} and Tsai, {Ming Jinn}",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2015",

month = jul,

day = "1",

doi = "10.1109/JEDS.2015.2435492",

language = "English",

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TY - JOUR

T1 - Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors

AU - Lee, Min Hung

AU - Wei, Y. T.

AU - Liu, C.

AU - Huang, J. J.

AU - Tang, Ming

AU - Chueh, Yu Lun

AU - Chu, K. Y.

AU - Chen, Miin Jang

AU - Lee, Heng Yuan

AU - Chen, Yu Sheng

AU - Lee, Li Heng

AU - Tsai, Ming Jinn

PY - 2015/7/1

Y1 - 2015/7/1

N2 - The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.

AB - The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.

KW - ferroelectric

KW - negative capacitance

KW - subthreshold swing

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VL - 3

SP - 377

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JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

IS - 4

M1 - 7110513

ER -

Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors

摘要

ASJC Scopus subject areas

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其它文件與鏈接

指紋

引用此

Ferroelectricity of HfZrO₂ in energy landscape with surface potential gain for low-power steep-slope transistors