Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors

Min Hung Lee*, Y. T. Wei, C. Liu, J. J. Huang, Ming Tang, Yu Lun Chueh, K. Y. Chu, Miin Jang Chen, Heng Yuan Lee, Yu Sheng Chen, Li Heng Lee, Ming Jinn Tsai

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

48 引文 斯高帕斯(Scopus)

摘要

The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.

原文英語
文章編號7110513
頁(從 - 到)377-381
頁數5
期刊IEEE Journal of the Electron Devices Society
3
發行號4
DOIs
出版狀態已發佈 - 2015 七月 1

ASJC Scopus subject areas

  • 生物技術
  • 電子、光磁材料
  • 電氣與電子工程

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