Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors

Min Hung Lee, Y. T. Wei, C. Liu, J. J. Huang, Ming Tang, Yu Lun Chueh, K. Y. Chu, Miin Jang Chen, Heng Yuan Lee, Yu Sheng Chen, Li Heng Lee, Ming Jinn Tsai

研究成果: 雜誌貢獻文章

40 引文 斯高帕斯(Scopus)

摘要

The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.

原文英語
文章編號7110513
頁(從 - 到)377-381
頁數5
期刊IEEE Journal of the Electron Devices Society
3
發行號4
DOIs
出版狀態已發佈 - 2015 七月 1

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Lee, M. H., Wei, Y. T., Liu, C., Huang, J. J., Tang, M., Chueh, Y. L., Chu, K. Y., Chen, M. J., Lee, H. Y., Chen, Y. S., Lee, L. H., & Tsai, M. J. (2015). Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors. IEEE Journal of the Electron Devices Society, 3(4), 377-381. [7110513]. https://doi.org/10.1109/JEDS.2015.2435492