Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices

Ruo Yin Liao; Hsuan Han Chen; Ping Yu Lin; Ting An Liang; Kuan Hung Su; I. Cheng Lin; Chen Hao Wen; Wu Ching Chou; Hsiao Hsuan Hsu; Chun Hu Cheng

doi:10.3390/ma16093306

Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices

Ruo Yin Liao, Hsuan Han Chen, Ping Yu Lin, Ting An Liang, Kuan Hung Su, I. Cheng Lin, Chen Hao Wen, Wu Ching Chou, Hsiao Hsuan Hsu^*, Chun Hu Cheng^*

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films. Based on experimental results, we find that the stacked HfZrO films not only exhibited excellent ferroelectricity but also demonstrated a high performance on reliability. The optimized condition of the 45% Zr proportion exhibited a robust ferroelectric polarization value of 32.57 μC/cm², and a polarization current with a peak value of 159.98 μA. Besides this, the ferroelectric stacked HfZrO also demonstrated good reliability with a ten-year lifetime under >−2 V constant voltage stress. Therefore, the appropriate modulation of zirconium proportion in stacked HfZrO showed great promise for integrating in high-performance ferroelectric memory.

原文	英語
文章編號	3306
期刊	Materials
卷	16
發行號	9
DOIs	https://doi.org/10.3390/ma16093306
出版狀態	已發佈 - 2023 5月

ASJC Scopus subject areas

一般材料科學
凝聚態物理學

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10.3390/ma16093306

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title = "Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices",

abstract = "In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films. Based on experimental results, we find that the stacked HfZrO films not only exhibited excellent ferroelectricity but also demonstrated a high performance on reliability. The optimized condition of the 45% Zr proportion exhibited a robust ferroelectric polarization value of 32.57 μC/cm2, and a polarization current with a peak value of 159.98 μA. Besides this, the ferroelectric stacked HfZrO also demonstrated good reliability with a ten-year lifetime under >−2 V constant voltage stress. Therefore, the appropriate modulation of zirconium proportion in stacked HfZrO showed great promise for integrating in high-performance ferroelectric memory.",

keywords = "HfZrO, ferroelectric, hysteresis loop, reliability",

author = "Liao, {Ruo Yin} and Chen, {Hsuan Han} and Lin, {Ping Yu} and Liang, {Ting An} and Su, {Kuan Hung} and Lin, {I. Cheng} and Wen, {Chen Hao} and Chou, {Wu Ching} and Hsu, {Hsiao Hsuan} and Cheng, {Chun Hu}",

note = "Publisher Copyright: {\textcopyright} 2023 by the authors.",

year = "2023",

month = may,

doi = "10.3390/ma16093306",

language = "English",

volume = "16",

journal = "Materials",

issn = "1996-1944",

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TY - JOUR

T1 - Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices

AU - Liao, Ruo Yin

AU - Chen, Hsuan Han

AU - Lin, Ping Yu

AU - Liang, Ting An

AU - Su, Kuan Hung

AU - Lin, I. Cheng

AU - Wen, Chen Hao

AU - Chou, Wu Ching

AU - Hsu, Hsiao Hsuan

AU - Cheng, Chun Hu

PY - 2023/5

Y1 - 2023/5

N2 - In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films. Based on experimental results, we find that the stacked HfZrO films not only exhibited excellent ferroelectricity but also demonstrated a high performance on reliability. The optimized condition of the 45% Zr proportion exhibited a robust ferroelectric polarization value of 32.57 μC/cm2, and a polarization current with a peak value of 159.98 μA. Besides this, the ferroelectric stacked HfZrO also demonstrated good reliability with a ten-year lifetime under >−2 V constant voltage stress. Therefore, the appropriate modulation of zirconium proportion in stacked HfZrO showed great promise for integrating in high-performance ferroelectric memory.

AB - In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films. Based on experimental results, we find that the stacked HfZrO films not only exhibited excellent ferroelectricity but also demonstrated a high performance on reliability. The optimized condition of the 45% Zr proportion exhibited a robust ferroelectric polarization value of 32.57 μC/cm2, and a polarization current with a peak value of 159.98 μA. Besides this, the ferroelectric stacked HfZrO also demonstrated good reliability with a ten-year lifetime under >−2 V constant voltage stress. Therefore, the appropriate modulation of zirconium proportion in stacked HfZrO showed great promise for integrating in high-performance ferroelectric memory.

KW - HfZrO

KW - ferroelectric

KW - hysteresis loop

KW - reliability

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JO - Materials

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Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices

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