Ferroelectric undoped HfOxcapacitor with symmetric synaptic for neural network accelerator

Jun Dao Luo*, Yu Ying Lai, Kuo Yu Hsiang, Chia Feng Wu, Yun Tien Yeh, Hao Tung Chung, Yi Shao Li, Kai Chi Chuang, Wei Shuo Li, Chun Yu Liao, Pin Guang Chen, Kuan Neng Chen, Min Hung Lee*, Huang Chung Cheng


研究成果: 雜誌貢獻期刊論文同行評審

8 引文 斯高帕斯(Scopus)


A plasma-based ferroelectric undoped HfOx capacitor is fabricated using plasma-enhanced atomic layer deposition (PE-ALD), and the multilevel characteristics of synaptic behavior are investigated. A gradual ferroelectric phase transition in the material is confirmed by grazing incidence X-ray diffraction (GI-XRD) for different O2 plasma periods. The metal-ferroelectric-metal (MFM) capacitor presents excellent remnant polarization (Pr) up to 13 μC/cm2 and a switching endurance of more than 108 cycles. Superior small potentiation/depression nonlinearity (αp/αd = -0.08/-1.66 for voltage modulation stimulation) for synaptic training and almost symmetry training curve (|αp - αd|) are obtained. High stability under multilevel operation with five consecutive cycles of alternating potentiation and depression is exhibited without significant polarization variation for each training step (pulse).

頁(從 - 到)1374-1377
期刊IEEE Transactions on Electron Devices
出版狀態已發佈 - 2021 3月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程


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