@article{c45b9b53e5ce41cb92f840ff3a8e61ba,
title = "Ferroelectric undoped HfOxcapacitor with symmetric synaptic for neural network accelerator",
abstract = "A plasma-based ferroelectric undoped HfOx capacitor is fabricated using plasma-enhanced atomic layer deposition (PE-ALD), and the multilevel characteristics of synaptic behavior are investigated. A gradual ferroelectric phase transition in the material is confirmed by grazing incidence X-ray diffraction (GI-XRD) for different O2 plasma periods. The metal-ferroelectric-metal (MFM) capacitor presents excellent remnant polarization (Pr) up to 13 μC/cm2 and a switching endurance of more than 108 cycles. Superior small potentiation/depression nonlinearity (αp/αd = -0.08/-1.66 for voltage modulation stimulation) for synaptic training and almost symmetry training curve (|αp - αd|) are obtained. High stability under multilevel operation with five consecutive cycles of alternating potentiation and depression is exhibited without significant polarization variation for each training step (pulse).",
keywords = "Ferroelectric, multilevel, synaptic training, undoped HfO",
author = "Luo, {Jun Dao} and Lai, {Yu Ying} and Hsiang, {Kuo Yu} and Wu, {Chia Feng} and Yeh, {Yun Tien} and Chung, {Hao Tung} and Li, {Yi Shao} and Chuang, {Kai Chi} and Li, {Wei Shuo} and Liao, {Chun Yu} and Chen, {Pin Guang} and Chen, {Kuan Neng} and Lee, {Min Hung} and Cheng, {Huang Chung}",
note = "Funding Information: Manuscript received December 22, 2020; accepted January 13, 2021. Date of publication January 28, 2021; date of current version February 24, 2021. This work was supported in part by the Ministry of Science and Technology (MOST) under Grant 107-2221-E-009-091-MY2, Grant 109-2218-E-003-003, and Grant 109-2622-8-002-003; and in part by the Taiwan Semiconductor Research Institute (TSRI), Taiwan. The review of this article was arranged by Editor W. Tsai. (Corresponding authors: Jun-Dao Luo; Min-Hung Lee.) Jun-Dao Luo, Yu-Ying Lai, Kuo-Yu Hsiang, Chia-Feng Wu, Yun-Tien Yeh, Hao-Tung Chung, Yi-Shao Li, Kai-Chi Chuang, Wei-Shuo Li, Kuan-Neng Chen, and Huang-Chung Cheng are with the Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (e-mail: dylan2149@gmail.com). Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2021",
month = mar,
doi = "10.1109/TED.2021.3052428",
language = "English",
volume = "68",
pages = "1374--1377",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",
}