Ferroelectric undoped HfOxcapacitor with symmetric synaptic for neural network accelerator

Jun Dao Luo, Yu Ying Lai, Kuo Yu Hsiang, Chia Feng Wu, Yun Tien Yeh, Hao Tung Chung, Yi Shao Li, Kai Chi Chuang, Wei Shuo Li, Chun Yu Liao, Pin Guang Chen, Kuan Neng Chen, Min Hung Lee, Huang Chung Cheng

研究成果: 雜誌貢獻期刊論文同行評審

摘要

A plasma-based ferroelectric undoped HfOx capacitor is fabricated using plasma-enhanced atomic layer deposition (PE-ALD), and the multilevel characteristics of synaptic behavior are investigated. A gradual ferroelectric phase transition in the material is confirmed by grazing incidence X-ray diffraction (GI-XRD) for different O2 plasma periods. The metal-ferroelectric-metal (MFM) capacitor presents excellent remnant polarization (Pr) up to 13 μC/cm2 and a switching endurance of more than 108 cycles. Superior small potentiation/depression nonlinearity (αp/αd = -0.08/-1.66 for voltage modulation stimulation) for synaptic training and almost symmetry training curve (|αp - αd|) are obtained. High stability under multilevel operation with five consecutive cycles of alternating potentiation and depression is exhibited without significant polarization variation for each training step (pulse).

原文英語
文章編號9339849
頁(從 - 到)1374-1377
頁數4
期刊IEEE Transactions on Electron Devices
68
發行號3
DOIs
出版狀態已發佈 - 2021 三月

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

指紋 深入研究「Ferroelectric undoped HfO<sub>x</sub>capacitor with symmetric synaptic for neural network accelerator」主題。共同形成了獨特的指紋。

引用此