Ferroelectric transistors based on shear-transformation-mediated rhombohedral-stacked molybdenum disulfide

Tilo H. Yang*, Bor Wei Liang, Hsiang Chi Hu, Fu Xiang Chen, Sheng Zhu Ho, Wen Hao Chang, Liu Yang, Han Chieh Lo, Tzu Hao Kuo, Jyun Hong Chen, Po Yen Lin, Kristan Bryan Simbulan, Zhao Feng Luo, Alice Chinghsuan Chang, Yi Hao Kuo, Yu Seng Ku, Yi Cheng Chen, You Jia Huang, Yu Chen Chang, Yu Fan ChiangTing Hua Lu, Min Hung Lee, Kai Shin Li, Menghao Wu, Yi Chun Chen, Chun Liang Lin*, Yann Wen Lan*


研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)


To develop low-power, non-volatile computing-in-memory device using ferroelectric transistor technologies, ferroelectric channel materials with scaled thicknesses are required. Two-dimensional semiconductors, such as molybdenum disulfide (MoS2), equipped with sliding ferroelectricity could provide an answer. However, achieving switchable electric polarization in epitaxial MoS2 remains challenging due to the absence of mobile domain boundaries. Here we show that polarity-switchable epitaxial rhombohedral-stacked (3R) MoS2 can be used as a ferroelectric channel in ferroelectric memory transistors. We show that a shear transformation can spontaneously occur in 3R MoS2 epilayers, producing heterostructures with stable ferroelectric domains embedded in a highly dislocated and unstable non-ferroelectric matrix. This diffusionless phase transformation process produces mobile screw dislocations that enable collective polarity control of 3R MoS2 via an electric field. Polarization–electric-field measurements reveal a switching field of 0.036 V nm−1 for shear-transformed 3R MoS2. Our sliding ferroelectric transistors are non-volatile memory units with thicknesses of only two atomic layers and exhibit an average memory window of 7 V with an applied voltage of 10 V, retention times greater than 104 seconds and endurance greater than 104 cycles.

頁(從 - 到)29-38
期刊Nature Electronics
出版狀態已發佈 - 2024 1月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 儀器
  • 電氣與電子工程


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