Ferroelectric negative capacitance hetero-tunnel field-effect-transistors with internal voltage amplification

M. H. Lee, J. C. Lin, Y. T. Wei, C. W. Chen, W. H. Tu, H. K. Zhuang, M. Tang

研究成果: 書貢獻/報告類型會議貢獻

19 引文 斯高帕斯(Scopus)

摘要

The ferroelectric negative capacitance (NC) hetero-tunnel FET is fabricated for the first time, demonstrating the significant improvement in subthreshold swing (∼double slope) and peak gm (118% enhancement) due to the internal voltage amplification. The peak gm enhancement at small VDS (-0.1V) indicates the intrinsic benefit by NC without lateral bias. The concept of coupling the ferroelectric polarization is proposed and synergistically contributes to the performance in future applications of steep subthreshold slope devices.

原文英語
主出版物標題2013 IEEE International Electron Devices Meeting, IEDM 2013
頁面4.5.1-4.5.4
DOIs
出版狀態已發佈 - 2013 十二月 1
事件2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, 美国
持續時間: 2013 十二月 92013 十二月 11

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

其他

其他2013 IEEE International Electron Devices Meeting, IEDM 2013
國家美国
城市Washington, DC
期間13/12/913/12/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • 引用此

    Lee, M. H., Lin, J. C., Wei, Y. T., Chen, C. W., Tu, W. H., Zhuang, H. K., & Tang, M. (2013). Ferroelectric negative capacitance hetero-tunnel field-effect-transistors with internal voltage amplification. 於 2013 IEEE International Electron Devices Meeting, IEDM 2013 (頁 4.5.1-4.5.4). [6724561] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724561