@article{51100339d0a8479593fa69c3495bcfdf,
title = "Ferroelectric HfZrO2with Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training",
abstract = "Atomic layer deposition (ALD)-based TiN electrode on ferroelectric HfZrO2 metal/ferroelectric/metal (MFM) capacitor and ferroelectric field-effect transistor (FeFET) is demonstrated experimentally with weight transfer, that is, $\Delta {P}$ , per pulse analysis through consecutive alternating potentiation/depression (Pot./Dep.) training pulses. The weight training pulse schemes are studied to have symmetric and linear synapse weight transfer to increase the accuracy and accelerate the deep neural network (DNN) training. With ALD TiN inserted, $\alpha _{p} / \alpha _{d} = -0.63$ / -0.84, asymmetry $\vert \alpha _{p} - \alpha _{d}\vert =0.21$ , and polarization modulation ratio (Pot./Dep.) = 97%/98% are achieved for MFM capacitor, and $\alpha _{p} / \alpha _{d} = -1.32$ / -1.88, asymmetry $\vert \alpha _{p} - \alpha _{d}\vert =0.56$ , and $G_{\text {max}} / G_{\text {min}} > 10\times $ are delivered for FeFET.",
keywords = "Ferroelectric memories, hafnium, neural networks",
author = "Hsiang, {K. Y.} and Liao, {C. Y.} and Chen, {K. T.} and Lin, {Y. Y.} and Chueh, {C. Y.} and C. Chang and Tseng, {Y. J.} and Yang, {Y. J.} and Chang, {S. T.} and Liao, {M. H.} and Hou, {T. H.} and Wu, {C. H.} and Ho, {C. C.} and Chiu, {J. P.} and Chang, {C. S.} and Lee, {M. H.}",
note = "Funding Information: Manuscript received May 15, 2020; revised July 27, 2020; accepted August 13, 2020. Date of publication August 31, 2020; date of current version September 22, 2020. This work was supported in part by the Ministry of Science and Technology (MOST) under Grant 109-2218-E-003-003 and Grant 108-2622-8-002-016, and in part by the Taiwan Semiconductor Research Institute (TSRI), Taiwan, for FET processing. The review of this article was arranged by Editor P. Narayanan. (Corresponding authors: M. H. Lee; C.-S. Chang.) K.-Y. Hsiang is with the Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan, and also with the Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2020",
month = oct,
doi = "10.1109/TED.2020.3017463",
language = "English",
volume = "67",
pages = "4201--4207",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",
}