Ferroelectric HfZrO2 FETs for steep switch onset

K. T. Chen; C. Y. Liao; H. Y. Chen; C. Lo; G. Y. Siang; Y. Y. Lin; Y. J. Tseng; C. Chang; C. Y. Chueh; Y. J. Yang; M. H. Liao; K. S. Li; S. T. Chang; M. H. Lee

doi:10.1016/j.mee.2019.110991

Ferroelectric HfZrO₂ FETs for steep switch onset

K. T. Chen, C. Y. Liao, H. Y. Chen, C. Lo, G. Y. Siang, Y. Y. Lin, Y. J. Tseng, C. Chang, C. Y. Chueh, Y. J. Yang, M. H. Liao, K. S. Li, S. T. Chang, M. H. Lee^*

^*此作品的通信作者

光電工程學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

The ferroelectric HfZrO₂ (HZO) is focused on coercive voltage for onset of negative capacitance (NC) with sub-2.3k_bT/q subthreshold swing (SS). The Fe-FETs with ultra-thin HZO (<10 nm) is experimentally obtained gradual transition on SS and V_T shift on annealing temperatures and sweep ranges. The polarization hysteresis of metal/ferroelectric/metal (MFM) is employed to match FET load line and balances the charge from positive capacitance (PC) to NC with increasing applied bias. The adjustment for charge of FET load line to reduce NC onset voltage is discussed. The feasible concept of coupling the ferroelectric Hf-based oxide is practicable to following current CMOS architectures.

原文	英語
文章編號	110991
期刊	Microelectronic Engineering
卷	215
DOIs	https://doi.org/10.1016/j.mee.2019.110991
出版狀態	已發佈 - 2019 7月 15

ASJC Scopus subject areas

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
表面、塗料和薄膜
電氣與電子工程

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10.1016/j.mee.2019.110991

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@article{609782a80dae4f61ac4eb15fb72472da,

title = "Ferroelectric HfZrO2 FETs for steep switch onset",

abstract = "The ferroelectric HfZrO2 (HZO) is focused on coercive voltage for onset of negative capacitance (NC) with sub-2.3kbT/q subthreshold swing (SS). The Fe-FETs with ultra-thin HZO (<10 nm) is experimentally obtained gradual transition on SS and VT shift on annealing temperatures and sweep ranges. The polarization hysteresis of metal/ferroelectric/metal (MFM) is employed to match FET load line and balances the charge from positive capacitance (PC) to NC with increasing applied bias. The adjustment for charge of FET load line to reduce NC onset voltage is discussed. The feasible concept of coupling the ferroelectric Hf-based oxide is practicable to following current CMOS architectures.",

keywords = "Fe-FETs, HZO, Negative capacitance, Onset voltage",

author = "Chen, {K. T.} and Liao, {C. Y.} and Chen, {H. Y.} and C. Lo and Siang, {G. Y.} and Lin, {Y. Y.} and Tseng, {Y. J.} and C. Chang and Chueh, {C. Y.} and Yang, {Y. J.} and Liao, {M. H.} and Li, {K. S.} and Chang, {S. T.} and Lee, {M. H.}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = jul,

day = "15",

doi = "10.1016/j.mee.2019.110991",

language = "English",

volume = "215",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - Ferroelectric HfZrO2 FETs for steep switch onset

AU - Chen, K. T.

AU - Liao, C. Y.

AU - Chen, H. Y.

AU - Lo, C.

AU - Siang, G. Y.

AU - Lin, Y. Y.

AU - Tseng, Y. J.

AU - Chang, C.

AU - Chueh, C. Y.

AU - Yang, Y. J.

AU - Liao, M. H.

AU - Li, K. S.

AU - Chang, S. T.

AU - Lee, M. H.

PY - 2019/7/15

Y1 - 2019/7/15

N2 - The ferroelectric HfZrO2 (HZO) is focused on coercive voltage for onset of negative capacitance (NC) with sub-2.3kbT/q subthreshold swing (SS). The Fe-FETs with ultra-thin HZO (<10 nm) is experimentally obtained gradual transition on SS and VT shift on annealing temperatures and sweep ranges. The polarization hysteresis of metal/ferroelectric/metal (MFM) is employed to match FET load line and balances the charge from positive capacitance (PC) to NC with increasing applied bias. The adjustment for charge of FET load line to reduce NC onset voltage is discussed. The feasible concept of coupling the ferroelectric Hf-based oxide is practicable to following current CMOS architectures.

AB - The ferroelectric HfZrO2 (HZO) is focused on coercive voltage for onset of negative capacitance (NC) with sub-2.3kbT/q subthreshold swing (SS). The Fe-FETs with ultra-thin HZO (<10 nm) is experimentally obtained gradual transition on SS and VT shift on annealing temperatures and sweep ranges. The polarization hysteresis of metal/ferroelectric/metal (MFM) is employed to match FET load line and balances the charge from positive capacitance (PC) to NC with increasing applied bias. The adjustment for charge of FET load line to reduce NC onset voltage is discussed. The feasible concept of coupling the ferroelectric Hf-based oxide is practicable to following current CMOS architectures.

KW - Fe-FETs

KW - HZO

KW - Negative capacitance

KW - Onset voltage

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UR - http://www.scopus.com/inward/citedby.url?scp=85065909926&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2019.110991

DO - 10.1016/j.mee.2019.110991

M3 - Article

AN - SCOPUS:85065909926

SN - 0167-9317

VL - 215

JO - Microelectronic Engineering

JF - Microelectronic Engineering

M1 - 110991

ER -

Ferroelectric HfZrO2 FETs for steep switch onset

摘要

ASJC Scopus subject areas

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Ferroelectric HfZrO₂ FETs for steep switch onset