The ferroelectric HfZrO2 (HZO) is focused on coercive voltage for onset of negative capacitance (NC) with sub-2.3kbT/q subthreshold swing (SS). The Fe-FETs with ultra-thin HZO (<10 nm) is experimentally obtained gradual transition on SS and VT shift on annealing temperatures and sweep ranges. The polarization hysteresis of metal/ferroelectric/metal (MFM) is employed to match FET load line and balances the charge from positive capacitance (PC) to NC with increasing applied bias. The adjustment for charge of FET load line to reduce NC onset voltage is discussed. The feasible concept of coupling the ferroelectric Hf-based oxide is practicable to following current CMOS architectures.
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