Ferroelectric HfZrO2 FETs for steep switch onset

K. T. Chen, C. Y. Liao, H. Y. Chen, C. Lo, G. Y. Siang, Y. Y. Lin, Y. J. Tseng, C. Chang, C. Y. Chueh, Y. J. Yang, M. H. Liao, K. S. Li, S. T. Chang, M. H. Lee

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

The ferroelectric HfZrO2 (HZO) is focused on coercive voltage for onset of negative capacitance (NC) with sub-2.3kbT/q subthreshold swing (SS). The Fe-FETs with ultra-thin HZO (<10 nm) is experimentally obtained gradual transition on SS and VT shift on annealing temperatures and sweep ranges. The polarization hysteresis of metal/ferroelectric/metal (MFM) is employed to match FET load line and balances the charge from positive capacitance (PC) to NC with increasing applied bias. The adjustment for charge of FET load line to reduce NC onset voltage is discussed. The feasible concept of coupling the ferroelectric Hf-based oxide is practicable to following current CMOS architectures.

原文英語
文章編號110991
期刊Microelectronic Engineering
215
DOIs
出版狀態已發佈 - 2019 七月 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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