Ferroelectric HfZrOₓ FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

K. T. Chen, S. S. Gu, Z. Y. Wang, C. Y. Liao, Y. C. Chou, R. C. Hong, S. Y. Chen, H. Y. Chen, G. Y. Siang, J. Le, P. G. Chen, M. H. Liao, K. S. Li, S. T. Chang, M. H. Lee

研究成果: 雜誌貢獻文章

5 引文 斯高帕斯(Scopus)

摘要

Ferroelectric HZO (ferroelectric-Hf₁₋ₓZrₓO₂) FETs on SOI (silicon on insulator) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (<60 mV/dec) is extended from ∼2.5 (bulk-Si) decades to ∼3.5 decades (SOI). Reverse-DIBL (drain-induced barrier lowering) and NDR (negative differential resistance) are confirmed at subthreshold region and weak inversion region, respectively.

原文英語
期刊IEEE Journal of the Electron Devices Society
DOIs
出版狀態接受/付印 - 2018 八月 3
對外發佈Yes

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

指紋 深入研究「Ferroelectric HfZrOₓ FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)」主題。共同形成了獨特的指紋。

  • 引用此

    Chen, K. T., Gu, S. S., Wang, Z. Y., Liao, C. Y., Chou, Y. C., Hong, R. C., Chen, S. Y., Chen, H. Y., Siang, G. Y., Le, J., Chen, P. G., Liao, M. H., Li, K. S., Chang, S. T., & Lee, M. H. (認可的出版社/出版中). Ferroelectric HfZrOₓ FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance). IEEE Journal of the Electron Devices Society. https://doi.org/10.1109/JEDS.2018.2863283