Ferroelectric HfZrOₓ FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

K. T. Chen, S. S. Gu, Z. Y. Wang, C. Y. Liao, Y. C. Chou, R. C. Hong, S. Y. Chen, H. Y. Chen, G. Y. Siang, J. Le, P. G. Chen, M. H. Liao, K. S. Li, S. T. Chang, M. H. Lee

研究成果: 雜誌貢獻期刊論文同行評審

8 引文 斯高帕斯(Scopus)

摘要

Ferroelectric HZO (ferroelectric-Hf₁₋ₓZrₓO₂) FETs on SOI (silicon on insulator) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (<60 mV/dec) is extended from ∼2.5 (bulk-Si) decades to ∼3.5 decades (SOI). Reverse-DIBL (drain-induced barrier lowering) and NDR (negative differential resistance) are confirmed at subthreshold region and weak inversion region, respectively.

原文英語
期刊IEEE Journal of the Electron Devices Society
DOIs
出版狀態接受/付印 - 2018 八月 3

ASJC Scopus subject areas

  • 生物技術
  • 電子、光磁材料
  • 電氣與電子工程

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