Ferroelectric HfZrO FETs for Emerging Technologies

Engineering & Materials Science

• Ferroelectric materials 100%
• Field effect transistors 81%
• Oxides 48%
• Capacitance 48%
• Data storage equipment 34%
• Atomic layer deposition 29%
• Hysteresis loops 22%
• Doping (additives) 21%
• Solar cells 20%
• Electric potential 19%
• Amplification 19%
• Polarization 17%
• Electric power utilization 13%

Chemical Compounds

• Oxide 40%
• Voltage 36%
• Atomic Layer Epitaxy 29%
• Hysteresis 24%
• Solar Cell 21%
• Polarization 18%
• Application 15%