Ferroelectric HfZrO FETs for Emerging Technologies

Min Hung Lee*

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

The prospect of ferroelectric Hf-based oxide by ALD (Atomic Layer Deposition) with bistable states nature feature of hysteresis loops satisfies the demands of the storage signal purpose for memory and the voltage amplification concept for negative capacitance (NC). Si doping in HfO2 to form a ferroelectric material was discovered by Qimonda AG in 2010; recently, ferroelectric Hf-based oxide materials have been used in many applications, such as memory, negative capacitance, passive component, and solar cells. For the Al (Artificial lntelligence) and loT (lnternet of Things) era, the requirement of scaling down supply voltage VDD and power consumption for low power devices is the pursued goals for CMOS and memory applications. The ferroelectric gate stack is integrated into FETs with NC effect for subthreshold swing (SS) improvement. The feasible concept of coupling the polarization Hf-based oxide is practicable to following current CMOS architectures.

原文英語
主出版物標題2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
發行者Institute of Electrical and Electronics Engineers Inc.
頁面148
頁數1
ISBN(電子)9781728142326
DOIs
出版狀態已發佈 - 2020 八月
事件2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, 臺灣
持續時間: 2020 八月 102020 八月 13

出版系列

名字2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

會議

會議2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
國家/地區臺灣
城市Hsinchu
期間2020/08/102020/08/13

ASJC Scopus subject areas

  • 人工智慧
  • 硬體和架構
  • 電氣與電子工程
  • 電子、光磁材料

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