Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on

Using a ferroelectric PbZrTiO₃ gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (g_d) shows only 16% enhancement with large V _DS (∼- 1.5V) indicates internal voltage amplification with ferroelectric negative capacitance effect beneficial to small lateral drain-source bias voltages (-0.1 V). The concept of coupling the ferroelectric polarization is proposed. The power consumption is also discussed in low-power applications of steep subthreshold slope devices.