Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on

M. H. Lee*, Y. T. Wei, J. C. Lin, C. W. Chen, W. H. Tu, M. Tang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

32 引文 斯高帕斯(Scopus)

摘要

Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (gd) shows only 16% enhancement with large V DS (∼- 1.5V) indicates internal voltage amplification with ferroelectric negative capacitance effect beneficial to small lateral drain-source bias voltages (-0.1 V). The concept of coupling the ferroelectric polarization is proposed. The power consumption is also discussed in low-power applications of steep subthreshold slope devices.

原文英語
文章編號107117
期刊AIP Advances
4
發行號10
DOIs
出版狀態已發佈 - 2014 十月 1

ASJC Scopus subject areas

  • 物理與天文學 (全部)

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