Ferroelectric control of the conduction at the LaAlO3/SrTiO 3 heterointerface

Vu Thanh Tra, Jhih Wei Chen, Po Cheng Huang, Bo Chao Huang, Ye Cao, Chao Hui Yeh, Heng Jui Liu, Eugene A. Eliseev, Anna N. Morozovska, Jiunn Yuan Lin, Yi Chun Chen, Ming Wen Chu, Po Wen Chiu, Ya Ping Chiu, Long Qing Chen, Chung Lin Wu, Ying Hao Chu

研究成果: 雜誌貢獻文章

55 引文 斯高帕斯(Scopus)

摘要

Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (Pup) leads to charge depletion and consequently low conduction. Switching the polarization direction (Pdown) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.

原文英語
頁(從 - 到)3357-3364
頁數8
期刊Advanced Materials
25
發行號24
DOIs
出版狀態已發佈 - 2013 六月 25

    指紋

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

引用此

Tra, V. T., Chen, J. W., Huang, P. C., Huang, B. C., Cao, Y., Yeh, C. H., Liu, H. J., Eliseev, E. A., Morozovska, A. N., Lin, J. Y., Chen, Y. C., Chu, M. W., Chiu, P. W., Chiu, Y. P., Chen, L. Q., Wu, C. L., & Chu, Y. H. (2013). Ferroelectric control of the conduction at the LaAlO3/SrTiO 3 heterointerface. Advanced Materials, 25(24), 3357-3364. https://doi.org/10.1002/adma.201300757