Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments

You Ting Lee; Hsuan Han Chen; Yi Chun Tung; Bing Yang Shih; Szu Yen Hsiung; Tsung Ming Lee; Chih Chieh Hsu; Chien Liu; Hsiao Hsuan Hsu; Chun Yen Chang; Yu Pin Lan; Chun Hu Cheng

doi:10.1109/EDSSC.2019.8753958

Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments

You Ting Lee, Hsuan Han Chen, Yi Chun Tung, Bing Yang Shih, Szu Yen Hsiung, Tsung Ming Lee, Chih Chieh Hsu, Chien Liu, Hsiao Hsuan Hsu, Chun Yen Chang, Yu Pin Lan, Chun Hu Cheng

機電工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章

摘要

In this paper, we experimentally demonstrated the advantage of remote nitrogen plasma on improving interface quality of HfO2-based ferroelectric devices. The remote nitrogen plasma not only reduces leakage current of gate stack to appropriately sustain the ferroelectricity during ferroelectric domain switching, but also effectively improve the ferroelectric fatigue to enhance endurance cycling performance.

原文	英語
主出版物標題	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781728102863
DOIs	https://doi.org/10.1109/EDSSC.2019.8753958
出版狀態	已發佈 - 2019 6月
事件	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 - Xi'an, 中国持續時間: 2019 6月 12 → 2019 6月 14

出版系列

名字	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

會議

會議	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
國家/地區	中国
城市	Xi'an
期間	2019/06/12 → 2019/06/14

ASJC Scopus subject areas

訊號處理
電氣與電子工程
儀器

存取文件

10.1109/EDSSC.2019.8753958

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引用此

Lee, Y. T., Chen, H. H., Tung, Y. C., Shih, B. Y., Hsiung, S. Y., Lee, T. M., Hsu, C. C., Liu, C., Hsu, H. H., Chang, C. Y., Lan, Y. P., & Cheng, C. H. (2019). Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments. 於 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 文章 8753958 (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2019.8753958

Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments. / Lee, You Ting; Chen, Hsuan Han; Tung, Yi Chun 等.
2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8753958 (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Lee, YT, Chen, HH, Tung, YC, Shih, BY, Hsiung, SY, Lee, TM, Hsu, CC, Liu, C, Hsu, HH, Chang, CY, Lan, YP & Cheng, CH 2019, Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments. 於 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019., 8753958, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Xi'an, 中国, 2019/06/12. https://doi.org/10.1109/EDSSC.2019.8753958

Lee YT, Chen HH, Tung YC, Shih BY, Hsiung SY, Lee TM 等. Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments. 於 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8753958. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). doi: 10.1109/EDSSC.2019.8753958

Lee, You Ting ; Chen, Hsuan Han ; Tung, Yi Chun 等. / Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments. 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

@inproceedings{b4f086ffb6df4cf9bee45f89b46eb4ae,

title = "Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments",

abstract = "In this paper, we experimentally demonstrated the advantage of remote nitrogen plasma on improving interface quality of HfO2-based ferroelectric devices. The remote nitrogen plasma not only reduces leakage current of gate stack to appropriately sustain the ferroelectricity during ferroelectric domain switching, but also effectively improve the ferroelectric fatigue to enhance endurance cycling performance.",

keywords = "Ferroelectric polarization, HfZrO, Nonvolatile memory, Remote plasma",

author = "Lee, {You Ting} and Chen, {Hsuan Han} and Tung, {Yi Chun} and Shih, {Bing Yang} and Hsiung, {Szu Yen} and Lee, {Tsung Ming} and Hsu, {Chih Chieh} and Chien Liu and Hsu, {Hsiao Hsuan} and Chang, {Chun Yen} and Lan, {Yu Pin} and Cheng, {Chun Hu}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 ; Conference date: 12-06-2019 Through 14-06-2019",

year = "2019",

month = jun,

doi = "10.1109/EDSSC.2019.8753958",

language = "English",

series = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",

}

TY - GEN

T1 - Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments

AU - Lee, You Ting

AU - Chen, Hsuan Han

AU - Tung, Yi Chun

AU - Shih, Bing Yang

AU - Hsiung, Szu Yen

AU - Lee, Tsung Ming

AU - Hsu, Chih Chieh

AU - Liu, Chien

AU - Hsu, Hsiao Hsuan

AU - Chang, Chun Yen

AU - Lan, Yu Pin

AU - Cheng, Chun Hu

PY - 2019/6

Y1 - 2019/6

N2 - In this paper, we experimentally demonstrated the advantage of remote nitrogen plasma on improving interface quality of HfO2-based ferroelectric devices. The remote nitrogen plasma not only reduces leakage current of gate stack to appropriately sustain the ferroelectricity during ferroelectric domain switching, but also effectively improve the ferroelectric fatigue to enhance endurance cycling performance.

AB - In this paper, we experimentally demonstrated the advantage of remote nitrogen plasma on improving interface quality of HfO2-based ferroelectric devices. The remote nitrogen plasma not only reduces leakage current of gate stack to appropriately sustain the ferroelectricity during ferroelectric domain switching, but also effectively improve the ferroelectric fatigue to enhance endurance cycling performance.

KW - Ferroelectric polarization

KW - HfZrO

KW - Nonvolatile memory

KW - Remote plasma

UR - http://www.scopus.com/inward/record.url?scp=85069461885&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85069461885&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2019.8753958

DO - 10.1109/EDSSC.2019.8753958

M3 - Conference contribution

AN - SCOPUS:85069461885

T3 - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

BT - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

Y2 - 12 June 2019 through 14 June 2019

ER -

Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments

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