Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments

You Ting Lee, Hsuan Han Chen, Yi Chun Tung, Bing Yang Shih, Szu Yen Hsiung, Tsung Ming Lee, Chih Chieh Hsu, Chien Liu, Hsiao Hsuan Hsu, Chun Yen Chang, Yu Pin Lan, Chun Hu Cheng

研究成果: 書貢獻/報告類型會議貢獻

摘要

In this paper, we experimentally demonstrated the advantage of remote nitrogen plasma on improving interface quality of HfO2-based ferroelectric devices. The remote nitrogen plasma not only reduces leakage current of gate stack to appropriately sustain the ferroelectricity during ferroelectric domain switching, but also effectively improve the ferroelectric fatigue to enhance endurance cycling performance.

原文英語
主出版物標題2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728102863
DOIs
出版狀態已發佈 - 2019 六月
事件2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 - Xi'an, 中国
持續時間: 2019 六月 122019 六月 14

出版系列

名字2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

會議

會議2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
國家中国
城市Xi'an
期間19/6/1219/6/14

    指紋

ASJC Scopus subject areas

  • Signal Processing
  • Electrical and Electronic Engineering
  • Instrumentation

引用此

Lee, Y. T., Chen, H. H., Tung, Y. C., Shih, B. Y., Hsiung, S. Y., Lee, T. M., Hsu, C. C., Liu, C., Hsu, H. H., Chang, C. Y., Lan, Y. P., & Cheng, C. H. (2019). Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments. 於 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 [8753958] (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2019.8753958