Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications

M. H. Lee; C. Y. Kuo; C. H. Tang; H. H. Chen; C. Y. Liao; R. C. Hong; S. S. Gu; Y. C. Chou; Z. Y. Wang; S. Y. Chen; P. G. Chen; M. H. Liao; K. S. Li

doi:10.1109/EDTM.2018.8421475

Ferroelectric Characteristics of Ultra-thin Hf_1-xZr_xO₂ Gate Stack and 1T Memory Operation Applications

M. H. Lee, C. Y. Kuo, C. H. Tang, H. H. Chen, C. Y. Liao, R. C. Hong, S. S. Gu, Y. C. Chou, Z. Y. Wang, S. Y. Chen, P. G. Chen, M. H. Liao, K. S. Li

光電工程學士學位學程

研究成果: 書貢獻/報告類型 › 會議論文篇章

2 引文斯高帕斯（Scopus）

摘要

The typical characteristics of ultra-thin Zr doped in HfO₂ as gate stack is demonstrated. The 1T memory window of P/E retention is 0.67V for 5nm and 1.52V for 7nm after extrapolated 10 years with V_P/E=± 4.8V, and >10⁹ cycles of read endurance. It is promising to use ultra-thin FE-HZO as the guidelines for 1T memory applications.

原文	英語
主出版物標題	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	271-273
頁數	3
ISBN（列印）	9781538637111
DOIs	https://doi.org/10.1109/EDTM.2018.8421475
出版狀態	已發佈 - 2018 7月 26
事件	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, 日本持續時間: 2018 3月 13 → 2018 3月 16

出版系列

名字	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

其他

其他	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
國家/地區	日本
城市	Kobe
期間	2018/03/13 → 2018/03/16

ASJC Scopus subject areas

電氣與電子工程
工業與製造工程
電子、光磁材料

存取文件

10.1109/EDTM.2018.8421475

其它文件與鏈接

引用此

Lee, M. H., Kuo, C. Y., Tang, C. H., Chen, H. H., Liao, C. Y., Hong, R. C., Gu, S. S., Chou, Y. C., Wang, Z. Y., Chen, S. Y., Chen, P. G., Liao, M. H., & Li, K. S. (2018). Ferroelectric Characteristics of Ultra-thin Hf_1-xZr_xO₂ Gate Stack and 1T Memory Operation Applications. 於 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (頁 271-273). 文章 8421475 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421475

Ferroelectric Characteristics of Ultra-thin Hf_1-xZr_xO₂ Gate Stack and 1T Memory Operation Applications. / Lee, M. H.; Kuo, C. Y.; Tang, C. H. 等.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 271-273 8421475 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Lee, MH, Kuo, CY, Tang, CH, Chen, HH, Liao, CY, Hong, RC, Gu, SS, Chou, YC, Wang, ZY, Chen, SY, Chen, PG, Liao, MH & Li, KS 2018, Ferroelectric Characteristics of Ultra-thin Hf_1-xZr_xO₂ Gate Stack and 1T Memory Operation Applications. 於 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421475, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 頁 271-273, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, 日本, 2018/03/13. https://doi.org/10.1109/EDTM.2018.8421475

Lee MH, Kuo CY, Tang CH, Chen HH, Liao CY, Hong RC 等. Ferroelectric Characteristics of Ultra-thin Hf_1-xZr_xO₂ Gate Stack and 1T Memory Operation Applications. 於 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 271-273. 8421475. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421475

Lee, M. H. ; Kuo, C. Y. ; Tang, C. H. 等. / Ferroelectric Characteristics of Ultra-thin Hf_1-xZr_xO₂ Gate Stack and 1T Memory Operation Applications. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. 頁 271-273 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

@inproceedings{b3d93a60e0af47688044a6fccbf41eeb,

title = "Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications",

abstract = "The typical characteristics of ultra-thin Zr doped in HfO2 as gate stack is demonstrated. The 1T memory window of P/E retention is 0.67V for 5nm and 1.52V for 7nm after extrapolated 10 years with VP/E=± 4.8V, and >109 cycles of read endurance. It is promising to use ultra-thin FE-HZO as the guidelines for 1T memory applications.",

author = "Lee, {M. H.} and Kuo, {C. Y.} and Tang, {C. H.} and Chen, {H. H.} and Liao, {C. Y.} and Hong, {R. C.} and Gu, {S. S.} and Chou, {Y. C.} and Wang, {Z. Y.} and Chen, {S. Y.} and Chen, {P. G.} and Liao, {M. H.} and Li, {K. S.}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

year = "2018",

month = jul,

day = "26",

doi = "10.1109/EDTM.2018.8421475",

language = "English",

isbn = "9781538637111",

series = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "271--273",

booktitle = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

}

TY - GEN

T1 - Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications

AU - Lee, M. H.

AU - Kuo, C. Y.

AU - Tang, C. H.

AU - Chen, H. H.

AU - Liao, C. Y.

AU - Hong, R. C.

AU - Gu, S. S.

AU - Chou, Y. C.

AU - Wang, Z. Y.

AU - Chen, S. Y.

AU - Chen, P. G.

AU - Liao, M. H.

AU - Li, K. S.

PY - 2018/7/26

Y1 - 2018/7/26

N2 - The typical characteristics of ultra-thin Zr doped in HfO2 as gate stack is demonstrated. The 1T memory window of P/E retention is 0.67V for 5nm and 1.52V for 7nm after extrapolated 10 years with VP/E=± 4.8V, and >109 cycles of read endurance. It is promising to use ultra-thin FE-HZO as the guidelines for 1T memory applications.

AB - The typical characteristics of ultra-thin Zr doped in HfO2 as gate stack is demonstrated. The 1T memory window of P/E retention is 0.67V for 5nm and 1.52V for 7nm after extrapolated 10 years with VP/E=± 4.8V, and >109 cycles of read endurance. It is promising to use ultra-thin FE-HZO as the guidelines for 1T memory applications.

UR - http://www.scopus.com/inward/record.url?scp=85051532526&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85051532526&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2018.8421475

DO - 10.1109/EDTM.2018.8421475

M3 - Conference contribution

AN - SCOPUS:85051532526

SN - 9781538637111

T3 - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

SP - 271

EP - 273

BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018

Y2 - 13 March 2018 through 16 March 2018

ER -