Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications

M. H. Lee, C. Y. Kuo, C. H. Tang, H. H. Chen, C. Y. Liao, R. C. Hong, S. S. Gu, Y. C. Chou, Z. Y. Wang, S. Y. Chen, P. G. Chen, M. H. Liao, K. S. Li

研究成果: 書貢獻/報告類型會議論文篇章

2 引文 斯高帕斯(Scopus)

摘要

The typical characteristics of ultra-thin Zr doped in HfO2 as gate stack is demonstrated. The 1T memory window of P/E retention is 0.67V for 5nm and 1.52V for 7nm after extrapolated 10 years with VP/E=± 4.8V, and >109 cycles of read endurance. It is promising to use ultra-thin FE-HZO as the guidelines for 1T memory applications.

原文英語
主出版物標題2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面271-273
頁數3
ISBN(列印)9781538637111
DOIs
出版狀態已發佈 - 2018 七月 26
事件2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, 日本
持續時間: 2018 三月 132018 三月 16

出版系列

名字2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

其他

其他2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
國家/地區日本
城市Kobe
期間2018/03/132018/03/16

ASJC Scopus subject areas

  • 電氣與電子工程
  • 工業與製造工程
  • 電子、光磁材料

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