Ferroelectric Al:HfO2 negative capacitance FETs

M. H. Lee; P. G. Chen; S. T. Fan; Y. C. Chou; C. Y. Kuo; C. H. Tang; H. H. Chen; S. S. Gu; R. C. Hong; Z. Y. Wang; S. Y. Chen; C. Y. Liao; K. T. Chen; S. T. Chang; M. H. Liao; K. S. Li; C. W. Liu

doi:10.1109/IEDM.2017.8268445

Ferroelectric Al:HfO₂ negative capacitance FETs

M. H. Lee, P. G. Chen, S. T. Fan, Y. C. Chou, C. Y. Kuo, C. H. Tang, H. H. Chen, S. S. Gu, R. C. Hong, Z. Y. Wang, S. Y. Chen, C. Y. Liao, K. T. Chen, S. T. Chang, M. H. Liao, K. S. Li, C. W. Liu

光電工程學士學位學程

研究成果: 書貢獻/報告類型 › 會議論文篇章

23 引文斯高帕斯（Scopus）

摘要

The first experimental demonstration of ferroelectric Al:HfO₂ (FE-HAO) FETs is proceeded with negative capacitance (NC) effect. The subthreshold swing (SS) of 40 mV/dec and 39 mV/dec for forward and reverse sweep, respectively, as well as almost hysteresis-free are achieved. The partial orthorhombic phase of FE-HAO is confirmed both with (PMA) and without (PDA) a capping layer. A gradual transition of polarization after 1000°C annealing is obtained with increasing Al concentration for large remanent polarization (P_r), coercive field (E_c), and high dielectric constant. The similar physical thickness (∼7nm) of ferroelectric-HfZrO_x (FE-HZO) FET is discussed for comparison. The NC modeling is performed to validate the NC effect for the Al:HfO_x material system. The transient behavior is performed at room temperature and low temperature, and the dynamic NC model is discussed.

原文	英語
主出版物標題	2017 IEEE International Electron Devices Meeting, IEDM 2017
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	23.3.1-23.3.4
ISBN（電子）	9781538635599
DOIs	https://doi.org/10.1109/IEDM.2017.8268445
出版狀態	已發佈 - 2018 1月 23
事件	63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, 美国持續時間: 2017 12月 2 → 2017 12月 6

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（列印）	0163-1918

其他

其他	63rd IEEE International Electron Devices Meeting, IEDM 2017
國家/地區	美国
城市	San Francisco
期間	2017/12/02 → 2017/12/06

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

存取文件

10.1109/IEDM.2017.8268445

其它文件與鏈接

引用此

Lee, M. H., Chen, P. G., Fan, S. T., Chou, Y. C., Kuo, C. Y., Tang, C. H., Chen, H. H., Gu, S. S., Hong, R. C., Wang, Z. Y., Chen, S. Y., Liao, C. Y., Chen, K. T., Chang, S. T., Liao, M. H., Li, K. S., & Liu, C. W. (2018). Ferroelectric Al:HfO₂ negative capacitance FETs. 於 2017 IEEE International Electron Devices Meeting, IEDM 2017 (頁 23.3.1-23.3.4). (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2017.8268445

Lee, MH, Chen, PG, Fan, ST, Chou, YC, Kuo, CY, Tang, CH, Chen, HH, Gu, SS, Hong, RC, Wang, ZY, Chen, SY, Liao, CY, Chen, KT, Chang, ST, Liao, MH, Li, KS & Liu, CW 2018, Ferroelectric Al:HfO₂ negative capacitance FETs. 於 2017 IEEE International Electron Devices Meeting, IEDM 2017. Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., 頁 23.3.1-23.3.4, 63rd IEEE International Electron Devices Meeting, IEDM 2017, San Francisco, 美国, 2017/12/02. https://doi.org/10.1109/IEDM.2017.8268445

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title = "Ferroelectric Al:HfO2 negative capacitance FETs",

abstract = "The first experimental demonstration of ferroelectric Al:HfO2 (FE-HAO) FETs is proceeded with negative capacitance (NC) effect. The subthreshold swing (SS) of 40 mV/dec and 39 mV/dec for forward and reverse sweep, respectively, as well as almost hysteresis-free are achieved. The partial orthorhombic phase of FE-HAO is confirmed both with (PMA) and without (PDA) a capping layer. A gradual transition of polarization after 1000°C annealing is obtained with increasing Al concentration for large remanent polarization (Pr), coercive field (Ec), and high dielectric constant. The similar physical thickness (∼7nm) of ferroelectric-HfZrOx (FE-HZO) FET is discussed for comparison. The NC modeling is performed to validate the NC effect for the Al:HfOx material system. The transient behavior is performed at room temperature and low temperature, and the dynamic NC model is discussed.",

author = "Lee, {M. H.} and Chen, {P. G.} and Fan, {S. T.} and Chou, {Y. C.} and Kuo, {C. Y.} and Tang, {C. H.} and Chen, {H. H.} and Gu, {S. S.} and Hong, {R. C.} and Wang, {Z. Y.} and Chen, {S. Y.} and Liao, {C. Y.} and Chen, {K. T.} and Chang, {S. T.} and Liao, {M. H.} and Li, {K. S.} and Liu, {C. W.}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 63rd IEEE International Electron Devices Meeting, IEDM 2017 ; Conference date: 02-12-2017 Through 06-12-2017",

year = "2018",

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doi = "10.1109/IEDM.2017.8268445",

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T1 - Ferroelectric Al:HfO2 negative capacitance FETs

AU - Lee, M. H.

AU - Chen, P. G.

AU - Fan, S. T.

AU - Chou, Y. C.

AU - Kuo, C. Y.

AU - Tang, C. H.

AU - Chen, H. H.

AU - Gu, S. S.

AU - Hong, R. C.

AU - Wang, Z. Y.

AU - Chen, S. Y.

AU - Liao, C. Y.

AU - Chen, K. T.

AU - Chang, S. T.

AU - Liao, M. H.

AU - Li, K. S.

AU - Liu, C. W.

PY - 2018/1/23

Y1 - 2018/1/23

N2 - The first experimental demonstration of ferroelectric Al:HfO2 (FE-HAO) FETs is proceeded with negative capacitance (NC) effect. The subthreshold swing (SS) of 40 mV/dec and 39 mV/dec for forward and reverse sweep, respectively, as well as almost hysteresis-free are achieved. The partial orthorhombic phase of FE-HAO is confirmed both with (PMA) and without (PDA) a capping layer. A gradual transition of polarization after 1000°C annealing is obtained with increasing Al concentration for large remanent polarization (Pr), coercive field (Ec), and high dielectric constant. The similar physical thickness (∼7nm) of ferroelectric-HfZrOx (FE-HZO) FET is discussed for comparison. The NC modeling is performed to validate the NC effect for the Al:HfOx material system. The transient behavior is performed at room temperature and low temperature, and the dynamic NC model is discussed.

AB - The first experimental demonstration of ferroelectric Al:HfO2 (FE-HAO) FETs is proceeded with negative capacitance (NC) effect. The subthreshold swing (SS) of 40 mV/dec and 39 mV/dec for forward and reverse sweep, respectively, as well as almost hysteresis-free are achieved. The partial orthorhombic phase of FE-HAO is confirmed both with (PMA) and without (PDA) a capping layer. A gradual transition of polarization after 1000°C annealing is obtained with increasing Al concentration for large remanent polarization (Pr), coercive field (Ec), and high dielectric constant. The similar physical thickness (∼7nm) of ferroelectric-HfZrOx (FE-HZO) FET is discussed for comparison. The NC modeling is performed to validate the NC effect for the Al:HfOx material system. The transient behavior is performed at room temperature and low temperature, and the dynamic NC model is discussed.

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