Ferroelectric Al:HfO2 negative capacitance FETs

M. H. Lee, P. G. Chen, S. T. Fan, Y. C. Chou, C. Y. Kuo, C. H. Tang, H. H. Chen, S. S. Gu, R. C. Hong, Z. Y. Wang, S. Y. Chen, C. Y. Liao, K. T. Chen, S. T. Chang, M. H. Liao, K. S. Li, C. W. Liu

研究成果: 書貢獻/報告類型會議論文篇章

22 引文 斯高帕斯(Scopus)


The first experimental demonstration of ferroelectric Al:HfO2 (FE-HAO) FETs is proceeded with negative capacitance (NC) effect. The subthreshold swing (SS) of 40 mV/dec and 39 mV/dec for forward and reverse sweep, respectively, as well as almost hysteresis-free are achieved. The partial orthorhombic phase of FE-HAO is confirmed both with (PMA) and without (PDA) a capping layer. A gradual transition of polarization after 1000°C annealing is obtained with increasing Al concentration for large remanent polarization (Pr), coercive field (Ec), and high dielectric constant. The similar physical thickness (∼7nm) of ferroelectric-HfZrOx (FE-HZO) FET is discussed for comparison. The NC modeling is performed to validate the NC effect for the Al:HfOx material system. The transient behavior is performed at room temperature and low temperature, and the dynamic NC model is discussed.

主出版物標題2017 IEEE International Electron Devices Meeting, IEDM 2017
發行者Institute of Electrical and Electronics Engineers Inc.
出版狀態已發佈 - 2018 1月 23
事件63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, 美国
持續時間: 2017 12月 22017 12月 6


名字Technical Digest - International Electron Devices Meeting, IEDM


其他63rd IEEE International Electron Devices Meeting, IEDM 2017
城市San Francisco

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學


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