Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM

K. Y. Hsiang, J. Y. Lee, Z. F. Lou, F. S. Chang, Y. C. Chen, Z. X. Li, M. H. Liao, C. W. Liu, T. H. Hou, P. Su, M. H. Lee*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

Opposite polarity cycling recovery (OPCR) is proposed to completely restore a fatigued antiferroelectric (AFE) capacitor back to its initial state, thereby extending the endurance number of switching cycles for AFE-RAM. A comprehensive model exclusive to AFE with unipolar cycling is revealed to achieve unlimited endurance, and the unipolar cycling with OPCR is experimentally demonstrated to accumulate 1012 cycles, while achieving the nondegradation and complete restoration of the remnant polarization (Pr). Furthermore, the proposed OPCR achieves a recovery time ratio of 0% (trecovery/tperiod), which indicates no extra time to spend for the recovery procedure.

原文英語
頁(從 - 到)2142-2146
頁數5
期刊IEEE Transactions on Electron Devices
70
發行號4
DOIs
出版狀態已發佈 - 2023 4月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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