@article{fc92c161b9734765b16ffa1088417534,
title = "Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM",
abstract = "Opposite polarity cycling recovery (OPCR) is proposed to completely restore a fatigued antiferroelectric (AFE) capacitor back to its initial state, thereby extending the endurance number of switching cycles for AFE-RAM. A comprehensive model exclusive to AFE with unipolar cycling is revealed to achieve unlimited endurance, and the unipolar cycling with OPCR is experimentally demonstrated to accumulate 1012 cycles, while achieving the nondegradation and complete restoration of the remnant polarization (Pr). Furthermore, the proposed OPCR achieves a recovery time ratio of 0% (trecovery/tperiod), which indicates no extra time to spend for the recovery procedure.",
keywords = "Antiferroelectric (AFE), endurance, recovery",
author = "Hsiang, {K. Y.} and Lee, {J. Y.} and Lou, {Z. F.} and Chang, {F. S.} and Chen, {Y. C.} and Li, {Z. X.} and Liao, {M. H.} and Liu, {C. W.} and Hou, {T. H.} and P. Su and Lee, {M. H.}",
note = "Funding Information: This work was supported in part by the National Science and Technology Council (NSTC) under Grant 111-2218-E-A49-016-MBK, Grant 111-2221-E-003-031-MY3, and Grant 111-2622-8-002-001; and in part by Taiwan Semiconductor Research Institute (TSRI) and Nano Facility Center (NFC), Taiwan. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2023",
month = apr,
day = "1",
doi = "10.1109/TED.2023.3238364",
language = "English",
volume = "70",
pages = "2142--2146",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",
}