Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors

Po Chun Chen, Yu Chien Chiu, Zhi Wei Zheng, Ming Huei Lin, Chun Hu Cheng, Guan Lin Liou, Hsiao Hsuan Hsu, Hsuan Ling Kao

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

In this study, we demonstrated a p-type and n-type SnO TFTs on flexible polyimide substrate. The fabricated p-type SnO TFT showed a high Ion/Ioff of 5.7, ×,105 and a high μ FEof 10.7 cm2,V-1s-1. Through optimizing the oxygen plasma condition, the n-type channel TFT transfered from prime p-type channel exhibits excellent characteristics, including a high on/off current ratio of 6.6,×,103, a low threshold voltage of-0.13 V, and a very high field-effect mobility of 28 cm2V-1s-1. This proposed low-temperature oxygen plasma treatment shows the potential in simplification of TFT process that can achieve n-type and p-type TFTs under the same device process.

原文英語
文章編號7959132
頁(從 - 到)876-879
頁數4
期刊IEEE Transactions on Nanotechnology
16
發行號5
DOIs
出版狀態已發佈 - 2017 九月 1

ASJC Scopus subject areas

  • 電腦科學應用
  • 電氣與電子工程

指紋

深入研究「Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors」主題。共同形成了獨特的指紋。

引用此