Far-IR investigation of thin InGaN layers

T. R. Yang, M. M. Dvoynenko*, Y. F. Cheng, Z. C. Feng


研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)


We have measured the reflection spectra of ultra-thin InxGa1-xN/GaN layers on sapphire substrates with thick GaN buffer layer at temperatures of 300, 200 and 90K. We could not observe any signal associated with these layers. Comparing the measured spectra with the calculated ones for well-mixed InxGa1-xN layers, we concluded that our samples had no mixed state. We also concluded that the separated In and N atoms did not form InN layers. The reason for the fact that we did not observe a response from these layers is the inhomogeneous broadening of the InxGa1-xN reflection line. We have calculated the absorption spectra of small parallelepiped-like InN particles in the GaN matrix. It has shown that the absorption line width for such small parallelepiped-like particles is bigger than that for the bulk InN material. We concluded that our samples contained separated In and demonstrated formation of InN clusters.

頁(從 - 到)268-278
期刊Physica B: Condensed Matter
出版狀態已發佈 - 2002 11月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程


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