Far-infrared absorption studies in MeV C+ and C2+ implanted InSb (111) crystals

T. R. Yang, G. Kuri*, C. C. Lu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this work, we briefly report on far-infrared absorption (FIR) studies on MeV C+ and C2+ implanted InSb crystals in order to investigate the quality of the implanted layers and the basic difference in the C+ and C2+ implantations. It is found from the FIR data that, in C2+ implanted InSb samples, the transverse optical mode profile is broadened as compared to the samples implanted with C+ at the same energy/atoms and at a constant fluence. A detailed analysis shows that the conductivity in C2+ irradiated specimen is enhanced compared to the C+ implantation. The results are attributed to the non-linear damage distribution due to C2+ and the substitutional lattice site occupation of the implanted C atoms.

原文英語
頁(從 - 到)2103-2104
頁數2
期刊Physica B: Condensed Matter
284-288
發行號PART II
DOIs
出版狀態已發佈 - 2000

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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