Far-infrared absorption and Raman scattering studies in MeV C+- and C2+-implanted InSb(111) crystals

T. R. Yang*, G. Kuri


研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)


Single crystal substrates of InSb(111) were implanted with C+ and C2+ ions at implantation energies of 1.00 and 2.00 MeV, respectively, and a constant fluence of 5×1014 C atoms/cm2 at room temperature. Raman scattering and FIR reflection measurements have been carried out on the implanted specimens as well as on a high-quality as-grown InSb crystal. Optical reflection spectra are presented for the implanted samples. These spectra, and their deviation from the reflection spectrum of crystalline InSb, are discussed in terms of the dielectric response model based on dielectric properties of the implanted region. The results indicate an increase of the carrier density as well as dielectric constant in the implanted specimens and, a decrease in the strength of the associated phonon mode. The damping constant changes by almost one order of magnitude. It is also found from both Raman and FIR data that in C2+-implanted InSb samples the TO mode profile is broadened as compared to the samples implanted with C+ at the same energy/atom and at a constant fluence. A tentative explanation for these results is presented.

頁(從 - 到)236-245
期刊Physica B: Condensed Matter
出版狀態已發佈 - 2000 九月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程


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