Fabrication of single-electron transistors based on proximity effects of electron-beam lithography

Shu Fen Hu, Yi Pin Fang, Ya Chang Chou, Gwo Jen Hwang

研究成果: 書貢獻/報告類型會議論文篇章

摘要

A simple method, based on the proximity effects of electron-beam lithography, which caused by overlapping the dosage distribution of the discretely electron beam written nano-dots, was employed to fabricate nanostructure containing narrow constrictions. A Si-based nano-dot with two narrow tunnel junctions called single electron transistor was formed after dry etching and thermal oxidation process since the overlapping region is much narrower than the diameter of the nano-dot. The electric characteristic of the SET was found to be consistent with the expected behavior of electron transport through a gated quantum dot.

原文英語
主出版物標題2004 4th IEEE Conference on Nanotechnology
頁面47-49
頁數3
出版狀態已發佈 - 2004 十二月 1
事件2004 4th IEEE Conference on Nanotechnology - Munich, 德国
持續時間: 2004 八月 162004 八月 19

出版系列

名字2004 4th IEEE Conference on Nanotechnology

其他

其他2004 4th IEEE Conference on Nanotechnology
國家德国
城市Munich
期間2004/08/162004/08/19

ASJC Scopus subject areas

  • Engineering(all)

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