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Fabrication of silicon nanowire structures based on proximity effects of electron-beam lithography
S. F. Hu
*
, W. C. Weng, Y. M. Wan
*
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雜誌貢獻
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期刊論文
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引文 斯高帕斯(Scopus)
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深入研究「Fabrication of silicon nanowire structures based on proximity effects of electron-beam lithography」主題。共同形成了獨特的指紋。
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Earth and Planetary Sciences
Silicon
100%
Fabrication
100%
Lithography
100%
Electron Beam
100%
Proximity
100%
Show
25%
Temperature
25%
Substrate
25%
Size
25%
Accumulation
25%
Existence
25%
Electric Potential
25%
Anisotropy
25%
Pitch (Inclination)
25%
Electron
25%
Wire
25%
Nonlinearity
25%
Engineering
Nanowire
100%
Fabrication
100%
Proximity Effect
100%
Temperature
50%
Electric Potential
50%
Measurement
50%
Silicon Substrate
50%
Nonlinearity
50%
One Dimensional
50%
Oscillation
50%
Single Electron
50%
Silicon Layer
50%
Thermal Effect
50%
INIS
fabrication
100%
nanowires
100%
silicon
100%
electron beams
100%
proximity effect
100%
oscillations
25%
size
25%
layers
25%
accumulation
25%
substrates
25%
voltage
25%
electrons
25%
wires
25%
nonlinear problems
25%
peaks
25%
one-dimensional calculations
25%
thermal effects
25%
Material Science
Nanowire
100%
Silicon
100%
Electron Optical Lithography
100%
Temperature
25%
Conductivity
25%
Current Voltage Characteristics
25%